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2SA1493 Dataheets PDF



Part Number 2SA1493
Manufacturers Sanken electric
Logo Sanken electric
Description Silicon PNP Transistor
Datasheet 2SA1493 Datasheet2SA1493 Datasheet (PDF)

2SA1493 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3857) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SA1493 –200 –200 –6 –15 –5 150(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Audio and General Purpose (Ta=25°C) 2SA1493 –100max –100max –200min 50min∗ – 3.0max 20typ 400typ V MHz pF 20.0min 4.0max sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=–200V VEB=–6V IC=–50mA VCE=–4V, IC=–5A IC=.

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2SA1493 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3857) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SA1493 –200 –200 –6 –15 –5 150(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Audio and General Purpose (Ta=25°C) 2SA1493 –100max –100max –200min 50min∗ – 3.0max 20typ 400typ V MHz pF 20.0min 4.0max sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=–200V VEB=–6V IC=–50mA VCE=–4V, IC=–5A IC=–10A, IB=–1A VCE=–12V, IE=0.5A VCB=–10V, f=1MHz External Dimensions MT-200 36.4±0.3 24.4±0.2 2-ø3.2±0.1 9 7 21.4±0.3 2.1 6.0±0.2 Unit µA µA V a b 2 3 1.05 +0.2 -0.1 5.45±0.1 5.45±0.1 B C E 0.65 +0.2 -0.1 3.0 +0.3 -0.1 ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) sTypical Switching Characteristics (Common Emitter) VCC (V) –60 RL (Ω) 12 IC (A) –5 VBB1 (V) –10 VBB2 (V) 5 IB1 (mA) –500 IB2 (mA) 500 ton (µs) 0.3typ tstg (µs) 0.9typ tf (µs) 0.2typ Weight : Approx 18.4g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) –15 5A –1. V CE ( sa t ) – I B Characteristics (Typical) –3 I C – V BE Temperature Characteristics (Typical) –15 (V C E =–4V) –1 A – 0 60 mA –400 mA Collector Current I C (A) –200m A –10 –1 00 mA Collector Current I C (A) –2 –10 eTe mp) Temp ) I B =–5 0m A –5 ˚C ( I C =–15A –10A –5A 0 0 –1 –2 –3 –4 0 0 25˚C 0 0 –1 –2 –3 –4 –30˚C 125 (CaseT Cas (Case –1 –5 –1 Base-Emittor Voltage V B E (V) emp) –2 Collector-Emi tter Voltage V C E (V) Base Current I B (A) h FE – I C Characteristics (Typical) (V C E =–4V) 300 DC C urrent G ain h FE h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 200 DC C urrent G ain h FE 125˚C 25˚C 100 –30˚C θ j- a (˚C /W ) θ j-a – t Characteristics 2 Typ 100 50 Transient Thermal Resistance 1 0.5 50 10 –0.02 –0.1 –0.5 –1 –5 –10 –15 20 –0.02 –0.1 –0.5 –1 –5 –10 –15 0.1 1 10 100 Time t(ms) 1000 2000 Collector Current I C (A) Collector Current I C (A) f T – I E Characteristics (Typical) (V C E =–12V) 30 –50 Safe Operating Area (Single Pulse) 160 3m P c – T a Derating 20 Typ Cut- off F re quen cy f T ( MH Z ) Co lle ctor Cu rr ent I C ( A) –10 –5 D C 10 Maximu m Power Dissip ation P C (W) m s 0m s 10ms 120 W 20 s ith In fin ite he 80 at si nk –1 –0.5 Without Heatsink Natural Cooling 10 40 0 0.02 –0.1 0.1 1 Emitter Current I E (A) 10 –2 –10 –100 –300 Collector-Emitter Voltage V C E (V) 5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 21 .


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