NJW21193G

NJW21193G (PNP) NJW21194G (NPN) Silicon Power Transistors The NJW21193G and NJW21194G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features Total Harmonic Distortion Characterized High DC Current Gain Excellent Gain Linearity High SOA These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector−Emitter Voltage − 1.5 V Collector Current − Continuous Collector Current − Peak (Note 1) Base Current − Continuous Total Power Dissipation @ TC = 25°C Derate Above 25°C VCEO VCBO VEBO VCEX IC ICM IB PD 250 Vdc 400 Vdc 5.0 Vdc 400 Vdc 16 Adc 30 Adc 5.0 Adc 200 W 1.6 W/°C Operating and Storage Junction Temperature Range TJ, Tstg −  65 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient Symbol RqJC RqJA Max 0.625 40 Unit °C/W °C/W http://onsemi.com 16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS PNP COLLECTOR 2, 4 NPN COLLECTOR...