AO8807 Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8807 uses advanced trench techn...
AO8807 Dual P-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO8807 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. AO8807 and AO8807L are electrically identical. - RoHS Compliant -Halogen Free
Features
VDS (V) = -12V ID = -6.5 A (VGS = -4.5V) RDS(ON) < 20mΩ (VGS = -4.5V) RDS(ON) < 24mΩ (VGS = -2.5V) RDS(ON) < 30mΩ (VGS = -1.8V) ESD Protected!
D1 TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2
Rg Rg
D2
G1
G2
S1
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation B
C
Maximum -12 ±8 -6.5 -5 -60 1.4 0.9 -55 to 150
Units V V A
TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG
W °C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient AD Maximum Junction-to-Lead
Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL
Typ 73 96 63
Max 90 125 75
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/
AO8807
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-12V, VGS=0V TJ=55°C VDS=0V, VGS=±8V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-6.5A TJ=125°C RDS(ON) Static Drain-Sou...