AO8807L

Freescale P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe TSSOP-8 saves board space Fast switching speed High performance trench technology o AO8 8 07 L/ MC8 8 07 L PRODUCT SUMMARY VDS (V) rDS(on) (OHM) 0.050 @ VGS = -4.5V -20 0.060 @ VGS = -2.5V 0.075 @ VGS = -1.8V TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 G1 D1 P-Channel MOSFET G2 D2 P-Channel MOSFET ID (A) -4.0 -3.6 -3.2 S1 S2 ABSOLUTE MAXIMUM RATINGS (T A = 25 C UNLESS OTHERWISE NOTED) Symbol Maximum Units Parameter -20 VDS Drain-Source Voltage V VGS ±8 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current b a a TA=25 C TA=70 C o o ID IDM IS -4.0 -3.2 -10 ±1.6 1.15 0.7 A W o A Continuous Source Current (Diode Conduction) Power Dissipation a TA=25 C TA=70 C o o PD Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 10 sec Steady State Symbol RthJA Typ 93 130 Max 110 150 o C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junctio...