LE28DW8102T

8 Megabit FlashBank Memory LE28DW8102T FEATURES: Single 3.0-Volt Read and Write Operations 1 Sp ec ifi ca tio ns 1 Separate Memory Banks by Address Space – Simultaneous Read and Write Capability Superior Reliability – Endurance: 10,000 Cycles – Data Retention: 10 years Low Power Consumption – Active Current, Read: 10 mA (typical) – Active Current, Read & Write: 30 mA (typical) – Standby Current: 5µA (typical) – Auto Low Power Mode Current: 5µA (typical) Read Access Time – 80/90 ns Latched Address and Data End of Write Detection – Toggle Bit – Data # Polling Flash Bank: Two Small Erase Element Sizes – 1K Words per Sector or 32K Words per Block – Erase either element before Word Program CMOS I/O Compatibility Packages Available – 48-Pin TSOP Continuous Hardware and Software Data Protection (SDP) Fast Write Operation – Bank Erase + Program: 4.5 sec (typical) – Block Erase + Program: 500 ms (typical) – Sector Erase + Program: 30 ms (typical) Fixed Erase, Program, Write Times – Does not change after cycling Product Description Pr el im in ar y The LE28DW8102T consists of two memory banks, 2 each 256K x 16 bits sector mode flash EEPROM manufactured with SANYO's proprietary, high performance FlashTechnology. The LE28DW8102T writes with a 3.0-volt-only power supply. The LE28DW8102T is divided into two separate memory banks, 2 each 512K x 16 Flash banks. Each Flash bank is typically used for program code storage and contains 256 sectors, each of 1K wo...