Medium Power Transistor (32V,1A)
2SB1132 / 2SA1515S / 2SB1237
Features 1) Low VCE(sat).
VCE(sat) = 0.2V(Typ.) (IC ...
Medium Power
Transistor (32V,1A)
2SB1132 / 2SA1515S / 2SB1237
Features 1) Low VCE(sat).
VCE(sat) = 0.2V(Typ.) (IC / IB = 500mA / 50mA) 2) Compliments 2SD1664 / 2SD1858
Structure Epitaxial planar type
PNP silicon
transistor
Dimensions (Unit : mm)
2SB1132
4.5
+0.2 −0.1
1.6 +− 0.1
1.5
+0.2 −0.1
2SA1515S 4 +− 0.2
2 +− 0.2
3 −+ 0.2
0.5 −+ 0.1
3Min.
+0.2 −0.1
4.0 −+ 0.3
(15Min.)
2.5
1.0 −+ 0.2
(1) (2) (3)
0.4 +− 0.1 1.5 +− 0.1
0.5 +− 0.1 3.0 +− 0.2
0.4 0.1 1.5+− 0.1
0.4
+0.1 −0.05
5
0.45
+0.15 −0.05
2.5
+0.4 −0.1
(1) Base
ROHM : MPT3
(2) Collector
EIAJ : SC-62
(3) Emitter
∗Abbreviated symbol: BA
(1) (2) (3)
ROHM : SPT EIAJ : SC-72
2SB1237
6.8+− 0.2
2.5+− 0.2
0.5
0.45
+0.15 −0.05
(1) Emitter (2) Collector (3) Base
4.4 −+ 0.2
1.0 0.9
0.65Max.
14.5 −+ 0.5
0.5+− 0.1 (1) (2) (3)
2.54 2.54
ROHM : ATV
∗ Denotes hFE
1.05 0.45+− 0.1
(1) Emitter (2) Collector (3) Base
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