MC4818

Freescale Dual N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SO-8 Surface Mount Package Saves Board Space High power and current handling capability Low side high current DC-DC Converter applications AO48 1 8 / MC48 1 8 PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 34 @ VGS = 10V 30 41 @ VGS = 4.5V ID (A) 6.9 6.0 1 2 3 4 8 7 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parameter Symbol Limit 30 Drain-Source Voltage VDS VGS Gate-Source Voltage ± 20 Continuous Drain Current Pulsed Drain Currentb Continuous Source Current (Diode Conduction) Power Dissipationa Operating Junction and Storage Temperature Range a a Units V TA=25oC TA=70 C o ID IDM IS ± 6.9 ± 5.6 ± 40 1.7 2.1 1.3 -55 to 150 A W o A TA=25 C TA=70 C o o PD TJ, Tstg C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Symbol RθJA Maximum 62.5 110 Units o o t <= 10 sec Steady-State C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature www.freescale.net.c...