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MC4840 Dataheets PDF



Part Number MC4840
Manufacturers FreesCale
Logo FreesCale
Description Dual N-Channel MOSFET
Datasheet MC4840 DatasheetMC4840 Datasheet (PDF)

Freescale Dual N-Channel 40-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • • • • Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOIC-8.

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Freescale Dual N-Channel 40-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • • • • Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOIC-8 saves board space Fast switching speed High performance trench technology AO48 40/ MC48 40 PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 22 @ VGS = 10V 40 27 @ VGS = 4.5V 1 2 3 4 ID (A) 8.3 7.3 8 7 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parameter Symbol Limit Units VDS 40 Drain-Source Voltage V VGS ±20 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current b a a TA=25 C TA=70 C o o ID IDM IS 8.3 6.8 ±50 2.3 2.1 1.3 -55 to 150 A W o A Continuous Source Current (Diode Conduction) Power Dissipation a TA=25 C TA=70 C o o PD TJ, Tstg Operating Junction and Storage Temperature Range C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Symbol RθJA Maximum 62.5 110 Units o o t <= 10 sec Steady-State C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature www.freescale.net.cn 1 Free Datasheet http://www.datasheet4u.com/ Freescale SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED) Paramete r Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current A AO48 40/ MC48 40 o Symbol V(BR)DSS VGS(th) IGSS IDSS ID(on) A Test Conditions VGS = 0 V, ID = 250 uA VDS = VGS, ID = 250 uA VDS = 0 V, VGS = 20 V Limits Unit Min Typ Max 30 1 ±100 V nA uA A 22 27 40 0.7 5 VDS = 32 V, VGS = 0 V VDS = 32 V, VGS = 0 V, T J = 55oC 1 25 20 Drain-Source On-Resistance Forward Tranconductance Diode Forward Voltage A rDS(on) g fs VSD ISM VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 8.3 A VGS = 4.5 V, ID = 7.3 A VDS = 15 V, ID = 8.3 A IS = 2.3 A, VGS = 0 V mΩ S V A Pulsed Source Current (Body Diode)A Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDS = 15 V, VGS = 5 V, ID = 8.3 A N-Channel VDS=20V, VGS=0V, f=1MHz 20 7 7 1317 272 169 nC pF VDD = 25 V, RL = 25 Ω , ID = 1 A, VGEN = 10 V 20 9 70 20 nS Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. FREESCALE reserves the right to make changes without fu rther notice to any products herein. FREESCALE makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale assumeany liability arising out of the application or us.


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