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Freescale
Dual N-Channel 40-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • • • • Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOIC-8 saves board space Fast switching speed High performance trench technology
AO48 40/ MC48 40
PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 22 @ VGS = 10V 40 27 @ VGS = 4.5V
1 2 3 4
ID (A) 8.3 7.3
8 7 6 5
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parameter Symbol Limit Units VDS 40 Drain-Source Voltage V VGS ±20 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
b a a
TA=25 C TA=70 C
o
o
ID IDM IS
8.3 6.8 ±50 2.3 2.1 1.3 -55 to 150 A W
o
A
Continuous Source Current (Diode Conduction) Power Dissipation
a
TA=25 C TA=70 C
o
o
PD TJ, Tstg
Operating Junction and Storage Temperature Range
C
THERMAL RESISTANCE RATINGS Parameter
Maximum Junction-to-Ambient
a
Symbol
RθJA
Maximum
62.5 110
Units
o o
t <= 10 sec Steady-State
C/W C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature
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Free Datasheet http://www.datasheet4u.com/
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SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED)
Paramete r Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current
A
AO48 40/ MC48 40
o
Symbol
V(BR)DSS VGS(th) IGSS IDSS ID(on)
A
Test Conditions
VGS = 0 V, ID = 250 uA VDS = VGS, ID = 250 uA
VDS = 0 V, VGS = 20 V
Limits Unit Min Typ Max
30 1
±100
V nA uA A 22 27 40 0.7
5
VDS = 32 V, VGS = 0 V
VDS = 32 V, VGS = 0 V, T J = 55oC
1 25 20
Drain-Source On-Resistance Forward Tranconductance Diode Forward Voltage
A
rDS(on) g fs VSD
ISM
VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 8.3 A VGS = 4.5 V, ID = 7.3 A VDS = 15 V, ID = 8.3 A IS = 2.3 A, VGS = 0 V
mΩ S V A
Pulsed Source Current (Body Diode)A
Dynamic
b
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time
Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf
VDS = 15 V, VGS = 5 V, ID = 8.3 A
N-Channel VDS=20V, VGS=0V, f=1MHz
20 7 7
1317 272 169
nC
pF
VDD = 25 V, RL = 25 Ω , ID = 1 A, VGEN = 10 V
20 9 70 20
nS
Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing.
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