RADIATION HARDENED LOGIC LEVEL POWER MOSFET
PD-97810
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39)
Product Summary
Part Number Radiation Level RDS(...
Description
PD-97810
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39)
Product Summary
Part Number Radiation Level RDS(on) IRHLF87Y20 100K Rads (Si) 32mΩ IRHLF83Y20 300K Rads (Si) 32mΩ ID 12A* 12A*
IRHLF87Y20 20V, N-CHANNEL
R8
TECHNOLOGY
International Rectifier’s R8TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments.The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation.This is achieved while maintaining single event gate rupture and single event burnout immunity. The device is ideal when used to interface directly with most logic gates, linear IC’s, micro-controllers, and other device types that operate from a 3.3-5V source. It may also be used to increase the output current of a PWM, voltage comparator or an operational amplifier where the logic level drive signal is available.
TO-39
Features:
n n n n n n n n
5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 4.5V, TC= 25°C ID @ VGS = 4.5V, TC=100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalan...
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