AP0903GMA

AP0903GMA Pb Free Plating Product Advanced Power Electronics Corp. ▼ SO-8 similar area footprint and pin assignment ▼ Low Gate Charge ▼ Fast Switching Speed ▼ RoHS Compliant G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 9mΩ 60A D Description The APAK-5 package is preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. S SS G APAK-5 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=100℃ IDM PD@TA=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 30 ±20 60 38 195 45 0.36 4 Units V V A A A W W/℃ mJ A ℃ ℃ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 29 24 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient 3 Value Max. Max. 2.8 85 Units ℃/W ℃/W Data and specifications subject to change without notice 200401053-1/4 Free Datasheet http://www.datasheet4u.com/ AP0903GMA Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj RDS(ON) Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 Typ. 0.02 35 17 5 10.3 8.2 105 21.4 8.5 245 170 1.5 Max. Units 9 18 3 1 250 ±100 26 2.3 V V/℃ mΩ mΩ V S ...