N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP09N90CW-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Minimize On-resistance ▼ Fast Switching ▼ Simple D...
Description
AP09N90CW-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Minimize On-resistance ▼ Fast Switching ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
D
BVDSS RDS(ON) ID
900V 1.4Ω 7.6A
G S
Description
AP09N90C provides minimize on-state resistance , superior switching performance and high efficiency switching power supply applications. TO-3P package is preferred for commercial-industrial applications and provides greater distance between pins to meet the requirements of most safety specifications.
G D S
TO-3P
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating 900 +30 7.6 4.8 25 208 1.6
2
Units V V A A A W W/ ℃ mJ A ℃ ℃
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range
120 6 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 0.6 40 Unit ℃/W ℃/W
Data & specifications subject to change without notice
1 200912163
Free Datasheet http://www.datasheet4u.com/
AP09N90CW-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
3
Test Co...
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