MC3406

Analog Power Freescale N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOT-23 saves board space Fast switching speed High performance trench technology AM2322N AO3406/ MC3406 PRODUCT SUMMARY VDS (V) rDS (on ) (Ω) 0.085 @ VGS = 10V 30 0.125 @ VGS = 4.5V ID (A) 2.5 1.7 G D S ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Maximum Units Drain-Source Voltage VDS 30 V Gate-Source Voltage ± 20 VGS Continuous Drain Current Pulsed Drain Current b a a o TA=25 C TA=70 C o o ID IDM IS 2.5 2 10 0.46 1.25 0.8 -55 to 150 o A A W C Continuous Source Current (Diode Conduction) Power Dissipation a TA=25 C TA=70 C o o PD TJ, Tstg Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parame te r t <= 5 sec a Maximum Junction-to-Ambient Steady-State Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Symbol R THJA Maximum 150 200 Units o C/W 1 www.freescale.net.cn Free Datasheet http://www.datasheet4u.com/ Analog Power Freescale SPECIFICATIONS (T A =...