IXFJ13N50

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFJ 13N50 VDSS ID (cont) RDS(on) trr = 500 = 13 = 0.4 £ 250 V A W ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C Maximum Ratings 500 500 ±20 ±30 13 52 13 18 5 180 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns W °C °C °C °C g Features Low profile, high power package Long creep and strike distances Easy up-grade path for TO-220 designs Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier Applications G = Gate, S = Source, D = Drain, TAB = Drain G D S é (TAB) 1.6 mm (0.062 in.) from case for 10 s 300 5 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2 4 ±100 TJ = 25°C TJ = 125°C 200 1 0.4 V V nA mA mA W VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 mA VDS = VGS, ID = 2.5 mA VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls Low ...