MDD1653 MOSFET Datasheet

MDD1653 Datasheet, PDF, Equivalent


Part Number

MDD1653

Description

30V N-Channel Trench MOSFET

Manufacture

MagnaChip

Total Page 7 Pages
Datasheet
Download MDD1653 Datasheet


MDD1653
MDD1653
30V N-channel Trench MOSFET : 30V, 50A, 8.5mΩ
General Description
The MDD1653 uses advanced Magnachips
MOSFET Technology, which provides high
performance in on-state resistance, fast switching
performance and excellent quality. MDD1653 is
suitable device for PWM, Load Switching and
general purpose applications.
Features
VDS = 30V
ID = 50A @VGS = 10V
RDS(ON)
< 8.5m@VGS = 10V
< 14.0m@VGS = 4.5V
Absoloute Maximun Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy (2)
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient (1)
Thermal Resistance, Junction-to-Case
August. 2008. Version 2.0
TC=25oC
TC=100oC
TC=25oC
TC=100oC
TA=25oC
TA=70oC
1
Symbol
VDSS
VGSS
ID
IDM
PD
PDSM
EAS
TJ, Tstg
Rating
30
±20
50
50
150
50
25
3
2.1
100
-55~150
Unit
V
V
A
A
A
W
W
mJ
oC
Symbol
RθJA
RθJC
Rating
45
2.5
Unit
oC/W
MagnaChip Semiconductor Ltd.
Free Datasheet http://www.datasheet4u.com/

MDD1653
Ordering Information
Part Number
MDD1653T
MDD1653R
Temp. Range
-55~150oC
-55~150oC
Package
D-PAK
D-PAK
Packing
Tube
Tape & Reel
RoHS Status
Halogen Free
Halogen Free
Electrical Characteristics (Ta =25oC)
Characteristics
Static Characteristics
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Symbol
BVDSS
VGS(th)
IDSS
IGSS
Drain-Source ON Resistance
RDS(ON)
On-State Drain Current
ID(ON)
Forward Transconductance
Dynamic Characteristics
gfs
Total Gate Charge
Qg(10V)
Total Gate Charge
Qg(4.5V)
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
Turn-On Delay Time
td(on)
Rise Time
tr
Trun-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward
Voltage
VSD
Body Diode Reverse Recovery
Time
trr
Body Diode Reverse Recovery
Charge
Qrr
Test Condition
ID = 250µA, VGS = 0V
VDS = VGS, ID = 250µA
VDS = 24V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS = 10V, ID = 30A
VGS = 4.5V, ID = 20A
VGS = -2.5V, ID = -6.9A
VDS = 5V, VGS = 10V
VDS = 5V, ID = 10A
VDS = 12.5V, ID = 20A, VGS = 10V
VDS = 12.5V, VGS = 0V, f = 1.0MHz
VGS = 10V, VDS = 12.5V, RL = 0.6Ω,
RG = 3Ω
IS = 1A, VGS = 0V
IF = 20A, dl/dt = 100A/µs
Note :
1. Surface mounted RF4 board with 2oz. Copper.
2. Starting TJ = 25°C, L = 1mH, IAS = 10A, VDD = 15V, VGS = 10V.
Min Typ
30 -
1.0 1.9
--
--
- 7.5
- 11.5
--
100 -
- 35
- 17.6
- 9.2
- 3.0
- 3.8
- 900
- 135
- 260
- 6.2
- 21.8
- 17.6
- 10.6
- 0.71
- 25.0
- 14.0
Max Unit
-
V
3
1
µA
±0.1
8.5
14 mΩ
-
-A
-S
-
-
nC
-
-
-
- pF
-
-
-
ns
-
-
-V
- ns
- nC
August. 2008. Version 2.0
2 MagnaChip Semiconductor Ltd.


Features MDD1653 – Single N-Channel Trench MOSF ET 30V MDD1653 30V N-channel Trench MO SFET : 30V, 50A, 8.5mΩ General Descr iption The MDD1653 uses advanced Magnac hip’s MOSFET Technology, which provid es high performance in on-state resista nce, fast switching performance and exc ellent quality. MDD1653 is suitable dev ice for PWM, Load Switching and general purpose applications. Features VDS = 30V ID = 50A @VGS = 10V RDS(ON) < 8.5m @VGS = 10V < 14.0mΩ @VGS = 4.5V A bsoloute Maximun Ratings (Ta = 25 C) Ch aracteristics Drain-Source Voltage Gate -Source Voltage Continuous Drain Curren t Pulsed Drain Current Power Dissipatio n Power Dissipation Single Pulse Avalan che Energy (2) (1) o Symbol VDSS VGSS TC=25 C TC=100 C TC=25 C TC=100 C TA=2 5 C TA=70 C o o o o o o Rating 30 ±20 50 50 150 50 25 3 2.1 100 -55~150 Uni t V V A A A W W mJ o ID IDM PD PDSM EA S TJ, Tstg Junction and Storage Temper ature Range C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistanc.
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