MDD1653

MDD1653 – Single N-Channel Trench MOSFET 30V MDD1653 30V N-channel Trench MOSFET : 30V, 50A, 8.5mΩ General Description The MDD1653 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1653 is suitable device for PWM, Load Switching and general purpose applications. Features VDS = 30V ID = 50A @VGS = 10V RDS(ON) < 8.5mΩ @VGS = 10V < 14.0mΩ @VGS = 4.5V Absoloute Maximun Ratings (Ta = 25 C) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Power Dissipation Single Pulse Avalanche Energy (2) (1) o Symbol VDSS VGSS TC=25 C TC=100 C TC=25 C TC=100 C TA=25 C TA=70 C o o o o o o Rating 30 ±20 50 50 150 50 25 3 2.1 100 -55~150 Unit V V A A A W W mJ o ID IDM PD PDSM EAS TJ, Tstg Junction and Storage Temperature Range C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case August. 2008. Version 2.0 1 (1) Symbol RθJA RθJC Rating 45 2.5 Unit o C/W MagnaChip Semiconductor Ltd. Free Datasheet http://www.datasheet4u.com/ MDD1653 – Single N-Channel Trench MOSFET 30V Ordering Information Part Number MDD1653T MDD1653R Temp. Range -55~150 C o -55~150 C o o Package D-PAK D-PAK Packing Tube Tape & Reel RoHS Status Halogen Free Halogen Free Electrical Characteristics (Ta =25 C) Characteristics Static Characteristics Drain-Source Breakdown Volta...