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Power Transistor. 2SD834 Datasheet

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Power Transistor. 2SD834 Datasheet






2SD834 Transistor. Datasheet pdf. Equivalent




2SD834 Transistor. Datasheet pdf. Equivalent





Part

2SD834

Description

(2SD880 / 2SD834) NPN Silicon Epitaxial Power Transistor



Feature


TIGER ELECTRONIC CO.,LTD 2SD880 / 2SB834 DESCRIPTION It is intented for use in power amplifier and switching applicati ons. ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC) Parameter Collector-Base Voltage C ollector-Emitter Voltage Emitter-Base V oltage Collector Current Base Current T otal Dissipation at Max. Operating Junc tion Temperature Symbol VCBO VCEO VEBO IC IB Ptot Tj Tst.
Manufacture

TGS

Datasheet
Download 2SD834 Datasheet


TGS 2SD834

2SD834; g Value 60 60 7 3.0 0.5 30 150 -55~150 Unit V V V A A W o o C C Storage Tem perature TO-220 ( Ta = 25 C) ELECTRIC AL CHARACTERISTICSBAG Parameter Collect or Cut-off Current Emitter Cut-off Curr ent Collector-Emitter Sustaining Voltag e DC Current Gain Collector-Emitter Sat uration Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Symbol Test Condi.


TGS 2SD834

tions VCB=60V, IE=0 VEB=7V, IC=0 IC=50mA , IB=0 VCE=4V, IC=1.0A VCE=4V, IC=3.0A 60 25 10 50 1.0 1.0 3 V V MHz Min. Typ. Max. 0.1 0.1 Unit mA mA V O ICEO IEB O VCEO hFE(1) hFE(2) VCE(sat) IC=3A,IB =300mA VBE(sat) VCE=5V,IC=0.5A fT VCE=5 V,IC=500mA Free Datasheet http://www.d atasheet4u.com/ .


TGS 2SD834

.

Part

2SD834

Description

(2SD880 / 2SD834) NPN Silicon Epitaxial Power Transistor



Feature


TIGER ELECTRONIC CO.,LTD 2SD880 / 2SB834 DESCRIPTION It is intented for use in power amplifier and switching applicati ons. ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC) Parameter Collector-Base Voltage C ollector-Emitter Voltage Emitter-Base V oltage Collector Current Base Current T otal Dissipation at Max. Operating Junc tion Temperature Symbol VCBO VCEO VEBO IC IB Ptot Tj Tst.
Manufacture

TGS

Datasheet
Download 2SD834 Datasheet




 2SD834
TIGER ELECTRONIC CO.,LTD
2SD880 / 2SB834
DESCRIPTION
It is intented for use in power
amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)
Parameter
Symbol Value Unit
Collector-Base Voltage
VCBO 60 V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
VCEO
VEBO
IC
IB
Ptot
Tj
Tstg
60 V
7V
3.0 A
0.5 A
30 W
150 oC
-55~150 oC
TO-220
ELECTRICAL CHARACTERISTICSB(ATGa = 25 OC)
Parameter
Symbol
Test Conditions
Collector Cut-off Current
ICEO VCB=60V, IE=0
Emitter Cut-off Current
IEBO VEB=7V, IC=0
Collector-Emitter Sustaining Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
VCEO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
IC=50mA, IB=0
VCE=4V, IC=1.0A
VCE=4V, IC=3.0A
IC=3A,IB=300mA
VCE=5V,IC=0.5A
VCE=5V,IC=500mA
Min.
60
25
10
3
Typ.
Max. Unit
0.1 mA
0.1 mA
V
50
1.0 V
1.0 V
MHz
Free Datasheet http://www.datasheet4u.com/











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