(2SD880 / 2SD834) NPN Silicon Epitaxial Power Transistor
TIGER ELECTRONIC CO.,LTD
2SD880 / 2SB834
DESCRIPTION It is intented for use in power amplifier and switching application...
Description
TIGER ELECTRONIC CO.,LTD
2SD880 / 2SB834
DESCRIPTION It is intented for use in power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation at
Max. Operating Junction Temperature
Symbol VCBO VCEO VEBO IC IB Ptot Tj Tstg
Value 60 60 7 3.0 0.5 30 150 -55~150
Unit V V V A A W
o o
C C
Storage Temperature
TO-220
( Ta = 25 C) ELECTRICAL CHARACTERISTICSBAG
Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Sustaining Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Symbol Test Conditions VCB=60V, IE=0 VEB=7V, IC=0 IC=50mA, IB=0 VCE=4V, IC=1.0A VCE=4V, IC=3.0A 60 25 10 50 1.0 1.0 3 V V MHz Min. Typ. Max. 0.1 0.1 Unit mA mA V
O
ICEO IEBO VCEO hFE(1) hFE(2)
VCE(sat) IC=3A,IB=300mA VBE(sat) VCE=5V,IC=0.5A fT
VCE=5V,IC=500mA
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