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UMD2N

SeCoS

NPN-PNP built-in resistors Multi-Chip Digital Transistor

UMD2N Elektronische Bauelemente NPN-PNP built-in resistors Multi-Chip Digital Transistor SOT-363 .055(1.40) .047(1.20)...


SeCoS

UMD2N

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Description
UMD2N Elektronische Bauelemente NPN-PNP built-in resistors Multi-Chip Digital Transistor SOT-363 .055(1.40) .047(1.20) .026TYP (0.65TYP) .021REF (0.525)REF .096(2.45) .085(2.15) .053(1.35) .045(1.15) 8 o 0 o Features * DTA124E and DTC124E transistors are built-in a SOT-363 package. * Transistor elements are independent, eliminating interference. * Mounting cost and area can be cut in half. (3) (2) R1 R2 DT r1 DT r2 R2 R1 (4) (5) (6) (1) .018(0.46) .010(0.26) .014(0.35) .006(0.15) .087(2.20) .079(2.00) .006(0.15) .003(0.08) .004(0.10) .000(0.00) .039(1.00) .035(0.90) .043(1.10) .035(0.90) R1=R2=22K Dimensions in inches and (millimeters) MARKING:D2 Electrical Characteristics( Tamb=25 C unless otherwise specified) O Parameter Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature Symbol VCC VIN IO IC(MAX) Pd Tj Tstg Limits 50 -10~40 30 -100 150(TOTAL) 150 -55~150 Unit V V mA mW ℃ ℃ Electrical characteristics (Ta=25℃) Parameter Input voltage Output voltage Input current Output current DC current gain Input resistance Resistance ratio Transition frequency Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 fT 56 15.4 0.8 22 1 250 28.6 1.2 MHz VCE=10V ,IE=-5mA,f=100MHz KΩ 3 0.3 0.36 0.5 Min. Typ Max. 0.5 Unit V V mA µA Conditions VCC=5V ,IO=100μA VO=0.2V ,IO=10mA IO/II=10mA/0.5mA VI=5V VCC=50V, VI=0 VO=5V,IO=5mA http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jan-2006 Rev. A ...




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