UMD6N
Elektronische Bauelemente Dual NPN+PNP Digital Transistors (Built-in Resistors)
RoHS Compliant Product A suffix o...
UMD6N
Elektronische Bauelemente Dual
NPN+
PNP Digital
Transistors (Built-in Resistors)
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
DTA143T(
PNP) and DTC143T(
NPN)
transistors are built-in a package.
Transistor elements are independent, eliminating interference. Mounting cost and area can be cut in half.
SOT-363
A E
L
EQUIVALENT CIRCUIT
F DG
B
C K H J
REF. A B C D E F
MARKING:D6
Millimeter Min. Max. 2.00 2.20 2.15 2.45 1.15 1.35 0.90 1.10 1.20 1.40 0.15 0.35
REF. G H J K L
Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.15 8° 0.650 TYP.
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power dissipation Junction & Storage temperature
Symbol
V(BR)CBO V(BR)CEO V(BR)EBO IC PC TJ, TSTG
Value
50 50 5 100 150 150, -55 ~ 150
Unit
V V V mA mW ℃
ABSOLUTE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS at Ta = 25°C
Parameter
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current transfer ratio Input resistance Transition frequency
Symbol
V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) hFE R1 fT
Min.
50 50 5 100 3.29 -
Typ.
4.7 250
Max.
0.5 0.5 0.3 600 6.11 -
Unit
V V A A V K MHz
Test Conditions
IC= 50A IC= 1mA IE= 50A VCB= 50V VEB= 4V IC= 5mA, IB= 0.25mA VCE= 5V, IC= 1mA
VCE= 10V,...