2SA1532

Transistor 2SA1532 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC3930 2.1±0.1 Unit: mm s Features q q 0.425 1.25±0.1 0.425 High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) Ratings –30 –20 –5 –30 150 150 –55 ~ +150 Unit V V V mA mW ˚C ˚C 0.65 1 2.0±0.2 1.3±0.1 0.65 3 2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 0.2 0.9±0.1 0.7±0.1 0 to 0.1 0.2±0.1 1:Base 2:Emitter 3:Collector EIAJ:SC–70 S–Mini Type Package Marking symbol : E s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Transition frequency Collector to emitter saturation voltage Base to emitter voltage Noise figure Reverse transfer impedance Common emitter reverse transfer capacitance (Ta=25˚C) Symbol ICBO ICEO IEBO hFE fT VCE(sat) VBE NF Zrb Cre * Conditions VCB = –10V, IE = 0 VCE = –20V, IB = 0 VEB = –5V, IC = 0 VCE = –10V, IC = –1mA VCB = –10V, IE = 1mA, f = 200MHz IC = –10mA, IB = –1mA VCE = –10V, IC = –1mA VCB = –10V, IE = 1mA, f = 5MHz VCB = –10V, IE = 1mA, f = 2MHz VCE = –10V, IC = –1mA f = 10.7MHz min typ max – 0.1 –100 –10 0.15–0.05 +0.1 0.3–0 +0.1 Unit µA µ...