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2SA1535 Dataheets PDF



Part Number 2SA1535
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon PNP Transistor
Datasheet 2SA1535 Datasheet2SA1535 Datasheet (PDF)

Power Transistors 2SA1535, 2SA1535A Silicon PNP epitaxial planar type For low-frequency driver and high power amplification Complementary to 2SC3944 and 2SC3944A 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 Unit: mm 4.2±0.2 s Features q q q 4.0 Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics High transition frequency fT Makes up a complementary pair with 2SC3944 and 2SC3944A, which is optimum for the driver-stage of a 60 to 100W output amplifier. (TC=25˚C.

  2SA1535   2SA1535



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Power Transistors 2SA1535, 2SA1535A Silicon PNP epitaxial planar type For low-frequency driver and high power amplification Complementary to 2SC3944 and 2SC3944A 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 Unit: mm 4.2±0.2 s Features q q q 4.0 Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics High transition frequency fT Makes up a complementary pair with 2SC3944 and 2SC3944A, which is optimum for the driver-stage of a 60 to 100W output amplifier. (TC=25˚C) Ratings –150 –180 –150 –180 –5 –1.5 –1 15 2.0 150 –55 to +150 Unit V 7.5±0.2 16.7±0.3 φ3.1±0.1 1.4±0.1 1.3±0.2 14.0±0.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SA1535 2SA1535A 2SA1535 VCEO VEBO ICP IC PC Tj Tstg Symbol VCBO Solder Dip 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 emitter voltage 2SA1535A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage 2SA1535 2SA1535 2SA1535A (TC=25˚C) Symbol ICBO VCEO VEBO hFE1* hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = –150V, IE = 0 IC = –1mA, IB = 0 IC = –100µA, IB = 0 IE = –10µA, IC = 0 VCE = –10V, IC = –150mA VCE = –5V, IC = –500mA IC = –500mA, IB = –50mA IC = –500mA, IB = –50mA VCE = –10V, IC = –50mA, f = 10MHz VCB = –10V, IE = 0, f = 1MHz –150 –180 –5 90 50 160 100 – 0.5 –1.0 200 30 50 –2.0 –2.0 V V MHz pF 220 min typ max –10 Unit µA V V Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance *h FE1 Rank classification Q 90 to 155 R 130 to 220 Rank hFE1 1 Power Transistors PC — Ta Collector to emitter saturation voltage VCE(sat) (V) 32 2SA1535, 2SA1535A VCE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) –3 IC/IB=10 –10 VBE(sat) — IC IC/IB=10 Collector power dissipation PC (W) Without heat sink 28 24 20 16 12 8 4 0 0 20 40 60 80 100 120 140 160 –1 –3 TC=–25˚C 100˚C 25˚C –1 – 0.3 25˚C TC=100˚C –25˚C – 0.3 – 0.1 – 0.1 – 0.03 – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –1 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 Ambient temperature Ta (˚C) Collector current IC (A) Collector current IC (A) hFE — IC 400 1000 VCE=–10V fT — IE 100 VCB=–10V f=10MHz TC=25˚C 300 Cob — VCB Collector output capacitance Cob (pF) IE=0 f=1MHz TC=25˚C 80 Forward current transfer ratio hFE 300 TC=–25˚C 100 100˚C 30 25˚C Transition frequency fT (MHz) 60 200 40 10 100 20 3 1 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 0 0.01 0.03 0.1 0.3 1 0 –1 –3 –10 –30 –100 Collector current IC (A) Emitter current IE (A) Collector to base voltage VCB (V) Area of safe operation (ASO) –10 –3 Single pulse TC=25˚C ICP t=1ms IC Collector current IC (A) –1 – 0.3 – 0.1.


2SA1534A 2SA1535 2SA1535A


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