Document
Power Transistors
2SA1535, 2SA1535A
Silicon PNP epitaxial planar type
For low-frequency driver and high power amplification Complementary to 2SC3944 and 2SC3944A
0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2
Unit: mm
4.2±0.2
s Features
q q q
4.0
Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics High transition frequency fT Makes up a complementary pair with 2SC3944 and 2SC3944A, which is optimum for the driver-stage of a 60 to 100W output amplifier. (TC=25˚C)
Ratings –150 –180 –150 –180 –5 –1.5 –1 15 2.0 150 –55 to +150 Unit V
7.5±0.2
16.7±0.3
φ3.1±0.1
1.4±0.1
1.3±0.2
14.0±0.5
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SA1535 2SA1535A 2SA1535 VCEO VEBO ICP IC PC Tj Tstg Symbol VCBO
Solder Dip
0.8±0.1
0.5 +0.2 –0.1
2.54±0.25 5.08±0.5 1 2 3
emitter voltage 2SA1535A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V V A A W ˚C ˚C
1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a)
s Electrical Characteristics
Parameter Collector cutoff current Collector to emitter voltage 2SA1535 2SA1535 2SA1535A
(TC=25˚C)
Symbol ICBO VCEO VEBO hFE1* hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = –150V, IE = 0 IC = –1mA, IB = 0 IC = –100µA, IB = 0 IE = –10µA, IC = 0 VCE = –10V, IC = –150mA VCE = –5V, IC = –500mA IC = –500mA, IB = –50mA IC = –500mA, IB = –50mA VCE = –10V, IC = –50mA, f = 10MHz VCB = –10V, IE = 0, f = 1MHz –150 –180 –5 90 50 160 100 – 0.5 –1.0 200 30 50 –2.0 –2.0 V V MHz pF 220 min typ max –10 Unit µA V V
Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance
*h FE1
Rank classification
Q 90 to 155 R 130 to 220
Rank hFE1
1
Power Transistors
PC — Ta
Collector to emitter saturation voltage VCE(sat) (V)
32
2SA1535, 2SA1535A
VCE(sat) — IC
Base to emitter saturation voltage VBE(sat) (V)
–3 IC/IB=10 –10
VBE(sat) — IC
IC/IB=10
Collector power dissipation PC (W)
Without heat sink 28 24 20 16 12 8 4 0 0 20 40 60 80 100 120 140 160
–1
–3 TC=–25˚C 100˚C 25˚C
–1
– 0.3 25˚C
TC=100˚C –25˚C
– 0.3
– 0.1
– 0.1
– 0.03
– 0.03
– 0.01 – 0.01
– 0.03
– 0.1
– 0.3
–1
– 0.01 – 0.01 – 0.03
– 0.1
– 0.3
–1
–3
Ambient temperature Ta (˚C)
Collector current IC (A)
Collector current IC (A)
hFE — IC
400 1000 VCE=–10V
fT — IE
100 VCB=–10V f=10MHz TC=25˚C 300
Cob — VCB
Collector output capacitance Cob (pF)
IE=0 f=1MHz TC=25˚C 80
Forward current transfer ratio hFE
300 TC=–25˚C 100 100˚C 30
25˚C
Transition frequency fT (MHz)
60
200
40
10
100
20
3
1 – 0.01 – 0.03
– 0.1
– 0.3
–1
–3
0 0.01
0.03
0.1
0.3
1
0 –1
–3
–10
–30
–100
Collector current IC (A)
Emitter current IE (A)
Collector to base voltage VCB (V)
Area of safe operation (ASO)
–10 –3 Single pulse TC=25˚C ICP t=1ms IC
Collector current IC (A)
–1
– 0.3 – 0.1.