Document
4V Drive Nch+Pch MOSFET
SH8M2
Structure Silicon N-channel / P-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S protection diode. 3) Small surface mount package (SOP8). Application Power switching, DC / DC converter.
Each lead has same dimensions
Dimensions (Unit : mm)
SOP8
Packaging specifications
Package Type SH8M2 Code Basic ordering unit (pieces) Taping TB 2500
Inner circuit
(8) (7) (6) (5)
∗2
∗2
(1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain
Absolute maximum ratings (Ta=25C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Storage temperature
∗1 Pw≤10μs, Duty cycle≤1% ∗2 Mounted on a ceramic board.
∗1
∗1
Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg
Continuous Pulsed Continuous Pulsed
Limits Tr1 : N-ch Tr2 : P-ch 30 −30 ±20 ±20 ±3.5 ±3.5 ±14 ±14 1.6 −1.6 14 −14 2.0 150 −55 to +150
Unit V V A A A A W / TOTAL °C °C
(1)
(2)
(3)
(4)
∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
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1/3
2009.12 - Rev.A
Free Datasheet http://www.datasheet4u.com/
SH8M2
N-ch Electrical characteristics (Ta=25C)
Parameter Symbol Min. − 30 − 1.0 − − − 2.0 − − − − − − − − − − Typ. − − − − 59 93 107 − 140 45 30 6 6 17 4 2.5 0.8 0.8 Max. IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
∗Pulsed
Data Sheet
RDS (on)∗
Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd
∗
∗ ∗ ∗ ∗ ∗ ∗ ∗
±10 − 1 2.5 83 130 150 − − − − − − − − 3.5 − −
Unit μA V μA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC
Conditions VGS=±20V, VDS=0V ID= 1mA, VGS=0V VDS= 30V, VGS=0V VDS= 10V, ID= 1mA ID= 3.5A, VGS= 10V ID= 3.5A, VGS= 4.5V ID= 3.5A, VGS= 4V VDS= 10V, ID= 3.5A VDS= 10V VGS=0V f=1MHz VDD 15V ID= 1.75A VGS= 10V RL= 8.57Ω RG=10Ω VDD 15V, VGS= 5V ID= 3.5A RL= 4.29Ω, RG= 10Ω
Body diode characteristics (Source-Drain) (Ta=25C)
Parameter Forward voltage
∗Pulsed
Symbol VSD ∗
Min. −
Typ. −
Max. 1.2
Unit V
Conditions IS= 6.4A, VGS=0V
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2009.12 - Rev.A
SH8M2
P-ch Electrical characteristics (Ta=25C)
Parameter Symbol Min. IGSS − Gate-source leakage Drain-source breakdown voltage V(BR) DSS −30 Zero gate voltage drain current − IDSS Gate threshold voltage VGS (th) −1.0 − Static drain-source on-state − RDS (on)∗ resistance − Yfs ∗ 1.8 Forward transfer admittance Ciss − Input capacitance Coss − Output capacitance − Crss Reverse transfer capacitance − td (on) ∗ Turn-on delay time − tr ∗ Rise time − td (off) ∗ Turn-off delay time − tf ∗ Fall time − Qg ∗ Total gate charge − Qgs ∗ Gate-source charge Qgd ∗ − Gate-drain charge
∗Pulsed
Data Sheet
Typ. − − − − 65 100 120 − 490 110 75 10 15 35 10 5.5 1.5 2.0
Max.
±10 − −1 −2.5 90 140 165 − − − − − − − − 7.7 − −
Unit μA V μA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC
Conditions VGS= ±20V, VDS=0V ID= −1mA, VGS=0V VDS= −30V, VGS=0V VDS= −10V, ID= −1mA ID= −3.5A, VGS= −10V ID= −1.75A, VGS= −4.5V ID= −1.75A, VGS= −4V VDS= −10V, ID= −1.75A VDS= −10V VGS= 0V f=1MHz VDD −15V ID= −1.75A VGS= −10V RL= 8.57Ω RG= 10Ω VDD −15V, VGS= −5V ID= −3.5A RL= 4.29Ω, RG= 10Ω
Body diode characteristics (Source-Drain) (Ta=25C)
Parameter Forward voltage
∗Pulsed
Symbol VSD ∗
Min. −
Typ. −
Max. −1.2
Unit V
Conditions IS= −1.6A, VGS=0V
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c 2009 ROHM Co., Ltd. All rights reserved. ○
3/3
2009.12 - Rev.A
Notice
Notes
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