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SH8M2 Dataheets PDF



Part Number SH8M2
Manufacturers Rohm
Logo Rohm
Description Nch+Pch MOSFET
Datasheet SH8M2 DatasheetSH8M2 Datasheet (PDF)

4V Drive Nch+Pch MOSFET SH8M2 Structure Silicon N-channel / P-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S protection diode. 3) Small surface mount package (SOP8). Application Power switching, DC / DC converter. Each lead has same dimensions Dimensions (Unit : mm) SOP8 Packaging specifications Package Type SH8M2 Code Basic ordering unit (pieces) Taping TB 2500 Inner circuit (8) (7) (6) (5) ∗2 ∗2 (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6).

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4V Drive Nch+Pch MOSFET SH8M2 Structure Silicon N-channel / P-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S protection diode. 3) Small surface mount package (SOP8). Application Power switching, DC / DC converter. Each lead has same dimensions Dimensions (Unit : mm) SOP8 Packaging specifications Package Type SH8M2 Code Basic ordering unit (pieces) Taping TB 2500 Inner circuit (8) (7) (6) (5) ∗2 ∗2 (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain Absolute maximum ratings (Ta=25C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Storage temperature ∗1 Pw≤10μs, Duty cycle≤1% ∗2 Mounted on a ceramic board. ∗1 ∗1 Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Continuous Pulsed Continuous Pulsed Limits Tr1 : N-ch Tr2 : P-ch 30 −30 ±20 ±20 ±3.5 ±3.5 ±14 ±14 1.6 −1.6 14 −14 2.0 150 −55 to +150 Unit V V A A A A W / TOTAL °C °C (1) (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/3 2009.12 - Rev.A Free Datasheet http://www.datasheet4u.com/ SH8M2 N-ch Electrical characteristics (Ta=25C) Parameter Symbol Min. − 30 − 1.0 − − − 2.0 − − − − − − − − − − Typ. − − − − 59 93 107 − 140 45 30 6 6 17 4 2.5 0.8 0.8 Max. IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗Pulsed Data Sheet RDS (on)∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ±10 − 1 2.5 83 130 150 − − − − − − − − 3.5 − − Unit μA V μA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±20V, VDS=0V ID= 1mA, VGS=0V VDS= 30V, VGS=0V VDS= 10V, ID= 1mA ID= 3.5A, VGS= 10V ID= 3.5A, VGS= 4.5V ID= 3.5A, VGS= 4V VDS= 10V, ID= 3.5A VDS= 10V VGS=0V f=1MHz VDD 15V ID= 1.75A VGS= 10V RL= 8.57Ω RG=10Ω VDD 15V, VGS= 5V ID= 3.5A RL= 4.29Ω, RG= 10Ω Body diode characteristics (Source-Drain) (Ta=25C) Parameter Forward voltage ∗Pulsed Symbol VSD ∗ Min. − Typ. − Max. 1.2 Unit V Conditions IS= 6.4A, VGS=0V www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 2/3 2009.12 - Rev.A SH8M2 P-ch Electrical characteristics (Ta=25C) Parameter Symbol Min. IGSS − Gate-source leakage Drain-source breakdown voltage V(BR) DSS −30 Zero gate voltage drain current − IDSS Gate threshold voltage VGS (th) −1.0 − Static drain-source on-state − RDS (on)∗ resistance − Yfs ∗ 1.8 Forward transfer admittance Ciss − Input capacitance Coss − Output capacitance − Crss Reverse transfer capacitance − td (on) ∗ Turn-on delay time − tr ∗ Rise time − td (off) ∗ Turn-off delay time − tf ∗ Fall time − Qg ∗ Total gate charge − Qgs ∗ Gate-source charge Qgd ∗ − Gate-drain charge ∗Pulsed Data Sheet Typ. − − − − 65 100 120 − 490 110 75 10 15 35 10 5.5 1.5 2.0 Max. ±10 − −1 −2.5 90 140 165 − − − − − − − − 7.7 − − Unit μA V μA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS= ±20V, VDS=0V ID= −1mA, VGS=0V VDS= −30V, VGS=0V VDS= −10V, ID= −1mA ID= −3.5A, VGS= −10V ID= −1.75A, VGS= −4.5V ID= −1.75A, VGS= −4V VDS= −10V, ID= −1.75A VDS= −10V VGS= 0V f=1MHz VDD −15V ID= −1.75A VGS= −10V RL= 8.57Ω RG= 10Ω VDD −15V, VGS= −5V ID= −3.5A RL= 4.29Ω, RG= 10Ω Body diode characteristics (Source-Drain) (Ta=25C) Parameter Forward voltage ∗Pulsed Symbol VSD ∗ Min. − Typ. − Max. −1.2 Unit V Conditions IS= −1.6A, VGS=0V www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 3/3 2009.12 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or othe.


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