2SA1585S

Transistors 2SB1424 / 2SA1585S Low VCE(sat) Transistor (−20V, −3A) 2SB1424 / 2SA1585S zFeatures 1) Low VCE(sat). VCE(sat) = −0.2V (Typ.) (IC/IB = −2A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. zStructure Epitaxial planar type PNP silicon transistor zExternal dimensions (Unit : mm) 2SB1424 4.5+−00..12 1.6±0.1 1.5±0.1 2SA1585S 4±0.2 2±0.2 3±0.2 0.5±0.1 3Min. (15Min.) 4.0±0.3 2.5−+00..12 1.0±0.2 (1) (2) (3) 0.4±0.1 1.5±0.1 0.5±0.1 3.0±0.2 0.4±0.1 1.5±0.1 0.4−+00..015 ROHM : MPT3 EIAJ : SC-62 (1) Base (2) Collector (3) Emitter ∗ Denotes hFE ∗ Abbreviated symbol: AE 0.45+−00..0155 2.5+−00..14 5 0.5 0.45+−00..0155 (1) (2) (3) ROHM : SPT EIAJ : SC-72 (1) Emitter (2) Collector (3) Base zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage 2SB1424 Collector current 2SA1585S Symbol VCBO VCEO VEBO IC ICP Collector power 2SB1424 dissipation 2SA1585S Junction temperature Storage temperature ∗ Single pulse Pw=10ms PC Tj Tstg Limits −20 −20 −6 −3 −2 −5 0.5 0.4 150 −55 to 150 Unit V V V A A(Pulse) ∗ W °C °C Rev.A 1/3 Transistors 2SB1424 / 2SA1585S zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Collector-base breakdown voltage BVCBO −20 Collector-emitter breakdown voltage BVCEO −20 Emitter-base breakdown voltage BVEBO −6 Collector cutoff current ICBO − Emitter cutoff current IEBO − Collector-emitter saturation ...