N-Channel MOSFET
SMG351AN
3A, 30V,RDS(ON) 60m£[ Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Produc...
Description
SMG351AN
3A, 30V,RDS(ON) 60m£[ Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
A L
Description
The SMG351AN uses advanced trench technology to provide excellent on-resistance with low gate change. The device is suitable for use as a load switch or in PWM applications.
S
2 3 Top View
SC-59
B
1
Dim A B C D
J K
Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40
Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80
D G C
G H J K L S
Features
* Lower Gate Charge * Small Package Outline
H
Drain Gate Source
D
All Dimension in mm
G
S
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol VDS VGS ID @TA=25 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a
Ratings 30 ±20 3 10 1.38 0.01 -55 ~ +150 Value 90
Unit V V A A W W/
Thermal Data
Parameter Thermal Resistance Junction-ambient3 Max.
Unit /W
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Free Datasheet http://www.datasheet4u.com/
Page 1 of 4
SMG351AN
3A, 30V,RDS(ON) 60m£[ Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics (Tj = 25
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
unless otherwise specified)
Min. 30 1.0 Typ. 0.1 13 8.5 1.5 3.2 6 20 20 3 660 90 70 0.9 ...
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