2SA1619

Transistor 2SA1619, 2SA1619A Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC4208 and 2SC4208A 5.0±0.2 4.0±0.2 Unit: mm s q q Features Complementary pair with 2SC4208 and 2SC4208A. Allowing supply with the radial taping and automatic insertion possible. (Ta=25˚C) Ratings –30 –60 –25 –50 –5 –1 – 0.5 1 150 –55 ~ +150 Unit V 0.45 –0.1 +0.15 Parameter Collector to base voltage Collector to 2SA1619 2SA1619A 2SA1619 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 13.5±0.5 s Absolute Maximum Ratings 0.7±0.1 0.7±0.2 8.0±0.2 0.45 –0.1 +0.15 emitter voltage 2SA1619A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V A A W ˚C ˚C 1 2 3 2.54±0.15 2.3±0.2 V 1.27 1.27 1:Emitter 2:Collector 3:Base TO–92NL Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SA1619 2SA1619A 2SA1619 2SA1619A (Ta=25˚C) Symbol ICBO VCBO VCEO VEBO hFE1* hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = –20V, IE = 0 IC = –10µA, IE = 0 IC = –10mA, IB = 0 IE = –10µA, IC = 0 VCE = –10V, IC = –150mA VCE = –10V, IC = –500mA IC = –300mA, IB = –30mA IC = –300mA, IB = –30mA VCB = –10V, IE = 50mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz –30 –60 –25 –50 –5 85 40 – 0.35 –1.1 200 6 15 – 0.6 –1.5 V V MHz pF 160 340 min typ max – 0.1 Unit µA V V V Emitter to base voltage Forward current tra...