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2SA1620 Dataheets PDF



Part Number 2SA1620
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon PNP Transistor
Datasheet 2SA1620 Datasheet2SA1620 Datasheet (PDF)

2SA1620 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1620 Audio Frequency Amplifier Applications • Complementary to 2SC4209 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg −80 V −80 V −5 V −300 mA −60 mA 200 mW 150 °C.

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2SA1620 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1620 Audio Frequency Amplifier Applications • Complementary to 2SC4209 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg −80 V −80 V −5 V −300 mA −60 mA 200 mW 150 °C −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO VCB = −50 V, IE = 0 IEBO VEB = −5 V, IC = 0 V (BR) CEO IC = −5 mA, IB = 0 hFE (1) (Note) VCE = −2 V, IC = −50 mA hFE (2) VCE (sat) VBE fT Cob VCE = −2 V, IC = −200 mA IC = −200 mA, IB = −20 mA VCE = −2 V, IC = −5 mA VCE = −10 V, IC = −10 mA VCB = −10 V, IE = 0, f = 1 MHz Note: hFE classification O: 70 to 140, Y: 120 to 240 JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Min Typ. Max Unit ⎯ ⎯ −0.1 μA ⎯ ⎯ −0.1 μA −80 ⎯ ⎯ V 70 ⎯ 240 40 ⎯ ⎯ ⎯ −0.55 ⎯ 70 100 ⎯ 14 ⎯ −0.4 V −0.8 V ⎯ MHz ⎯ pF Marking Start of commercial production 1987-05 1 2014-03-01 2SA1620 2 2014-03-01 2SA1620 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data .


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