TFP740

TAK CHEONG ® SEM ICON DU CTO R N-Channel Power MOSFET 10A, 400V, 0.55Ω General Description The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance. This device is well suited for high efficiency switched mode power suppliers, active power factor correction, electronic lamp ballasts based half bridge topology. 1 2 3 1 = Gate 2 = Drain 3 = Source TO-220AB DEVICE MARKING DIAGRAM L xxyy TFP XXXX L = Tak Cheong Logo xxyy = Monthly Date Code TFPXXXX = Device Type Features ● ● ● ● Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fast recovery diode. D G S ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise noted ) Symbol VDSS VGSS ID IDM PD EAS EAR TJ Tstg Parameter Drain- Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipation Derating factor above 25℃ Single Pulsed Avalanche Energy Repetitive Avalanche Energy Operating Junction Temperature Storage Temperature Range (Note 1) (Note 2) (Note 2) Value 400 ±30 10 40 125 1.0 680 12.5 150 - 55 to +150 Units V V A A W W/℃ mJ mJ ℃ ℃ Notes: 1. L=18.5mH, IAS=10A, VDD=50V, RG=50Ω, Starting TJ=25℃ 2. Repetitive Rating: Pulse width limited by maximum junction temper...