N-Channel Power MOSFET
TAK CHEONG
N-Channel Power MOSFET
7.2A, 650V, 1.5Ω
General Description
® SEM ICON DU CTO R
The N-Channel MOSFET is use...
Description
TAK CHEONG
N-Channel Power MOSFET
7.2A, 650V, 1.5Ω
General Description
® SEM ICON DU CTO R
The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance. This device is well suited for high efficiency switched mode power suppliers, active power factor correction, electronic lamp ballasts based half bridge topology.
1
1 = Gate 2 = Drain 3 = Source
2 3
TO-220AB
DEVICE MARKING DIAGRAM
L xxyy TFP XXXX
L = Tak Cheong Logo xxyy = Monthly Date Code TFPXXXX = Device Type
Features
● ● ● ● Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fast recovery diode.
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise noted )
Symbol VDSS VGSS ID IDM PD EAS EAR TJ Tstg Parameter Drain- Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipation Derating factor above 25℃ Single Pulsed Avalanche Energy Repetitive Avalanche Energy Operating Junction Temperature Storage Temperature Range (Note 1) (Note 2) (Note 2) Value 650 ±30 7.2 28.8 137 1.1 274 13.7 150 - 55 to +150 Units V V A A W W/℃ mJ mJ ℃ ℃
Notes:
1. L=9mH, IAS=7.2A, VDD=50V, RG=50Ω, Starting TJ=25℃ 2. Repetitive Rating: Pulse width limited by maximum junction tempe...
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