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2SA1667 Dataheets PDF



Part Number 2SA1667
Manufacturers Sanken electric
Logo Sanken electric
Description Silicon PNP Transistor
Datasheet 2SA1667 Datasheet2SA1667 Datasheet (PDF)

2SA1667/1668 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4381/4382) Application : TV Vertical Output, Audio Output Driver and General Purpose sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics Ratings Symbol Unit 2SA1667 2SA1668 Symbol Conditions VCBO –150 –200 V ICBO VCEO –150 –200 V VCB= VEBO –6 V IEBO VEB=–6V IC –2 IB –1 A V(BR)CEO IC=–25mA A hFE VCE=–10V, IC=–0.7A PC 25(Tc=25°C) Tj 150 Tstg –55 to +150 W VCE(sat) IC=–0.7.

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2SA1667/1668 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4381/4382) Application : TV Vertical Output, Audio Output Driver and General Purpose sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics Ratings Symbol Unit 2SA1667 2SA1668 Symbol Conditions VCBO –150 –200 V ICBO VCEO –150 –200 V VCB= VEBO –6 V IEBO VEB=–6V IC –2 IB –1 A V(BR)CEO IC=–25mA A hFE VCE=–10V, IC=–0.7A PC 25(Tc=25°C) Tj 150 Tstg –55 to +150 W VCE(sat) IC=–0.7A, IB=–0.07A °C fT VCE=–12V, IE=0.2A °C COB VCB=–10V, f=1MHz sTypical Switching Characteristics (Common Emitter) VCC RL IC VBB1 VBB2 IB1 IB2 (V) (Ω) (A) (V) (V) (mA) (mA) –20 20 –1 –10 5 –100 100 (Ta=25°C) Ratings 2SA1667 2SA1668 Unit –10max –10max µA –150 –200 V –10max µA –150min –200min V 60min –1.0max V 20typ MHz 60typ pF ton (µs) 0.4typ tstg (µs) 1.5typ tf (µs) 0.5typ External Dimensions FM20 (TO220F) 10.1±0.2 4.2±0.2 2.8 c0.5 4.0±0.2 16.9±0.3 8.4±0.2 ø3.3±0.2 a b 3.9 ±0.2 0.8±0.2 13.0min 1.35±0.15 1.35±0.15 2.54 0.85 +0.2 -0.1 2.54 0.45 +0.2 -0.1 2.4±0.2 2.2±0.2 Weight : Approx 2.0g BCE a. Part No. b. Lot No. Collector Current IC(A) DC Current Gain hFE I C– V CE Characteristics (Typical) –2.0 –1.6 –50mA –1.2 –0.8 IB=–5mA/Step –0.4 0 0 –2 –4 –6 –8 –10 Collector-Emitter Voltage VCE(V) Collector-Emitter Saturation Voltage VCE(sat)(V) V CE( s a t ) – I B Characteristics (Typical) –3 I C– V BE Temperature Characteristics (Typical) (VCE=–10V) –2 Collector Current IC(A) 125˚C (Case Temp) –235˚0˚CC((CCaasseeTTeemmp)p) –1.6 –2 –1.2 –1 0 –2 –0.8 –0.5A –1A –10 –100 Base Current IB(mA) IC=–2A –1000 –0.4 0 0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 Base-Emittor Voltage VBE(V) Transient Thermal Resistance θ j-a( ˚ C / W ) DC Current Gain hFE h FE– I C Characteristics (Typical) (VCE=–10V) 400 h FE– I C Temperature Characteristics (Typical) (VCE=–10V) 400 125˚C Typ 100 25˚C –30˚C 100 θ j-a– t Characteristics 5 1 40 –0.01 –0.1 Collector Current IC(A) –1 –2 30 –0.01 –0.1 Collector Current IC(A) 0.5 –1 –2 1 10 100 Time t(ms) 1000 Cut-off Frequency fT(MHZ) f T– I E Characteristics (Typical) (VCE=–12V) 50 Safe Operating Area (Single Pulse) –5 Collector Current IC(A) 40 Typ 30 –1 DC 20 10 0 0.01 0.1 Emitter Current IE(A) 1 2 –0.1 –0.01 –1 Without Heatsink Natural Cooling 1.2SA1667 2.2SA1668 12 –10 –100 Collector-Emitter Voltage VCE(V) –300 Maximum Power Dissipation PC(W) Infinite heatsink With 1ms 5ms 20ms Pc–Ta Derating 25 20 Natural Cooling Silicone Grease Heatsink: Aluminum in mm 150x150x2 10 1 0 0 x1 0 0 x 2 50x50x2 Without Heatsink 2 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 25 .


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