High Voltage IGBT
High Voltage IGBT
For Capacitor Discharge Applications
( Electrically Isolated Tab)
IXGF30N400
VCES = 4000V = 30A IC25...
Description
High Voltage IGBT
For Capacitor Discharge Applications
( Electrically Isolated Tab)
IXGF30N400
VCES = 4000V = 30A IC25 VCE(sat) ≤ 3.1V
ISOPLUS i4-PakTM Symbol VCES VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC VISOL Weight 1.6 mm (0.062 in.) from case for 10s Plastic body for 10s Mounting Force 50/60Hz, 1 minute Test Conditions TJ = 25°C to 150°C Continuous Transient TC = 25°C TC = 110°C TC = 25°C, VGE = 20V, 1ms VGE = 20V, TVJ = 125°C, RG = 2Ω Clamped Inductive Load TC = 25°C Maximum Ratings 4000 ± 20 ± 30 30 15 360 ICM = 300 VCE ≤ 0.8 VCES 160 -55 ... +150 150 -55 ... +150 300 260 20..120 / 4.5..27 4000 5 W °C °C °C °C °C Nm/lb.in. V~ g Advantages High Power Density Easy to Mount V V V A A A A Features Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4000V Electrical Isolation High Peak Current Capability Low Saturation Voltage Molding Epoxies Meet UL 94 V-0 Flammability Classification
1 = Gate 2 = Emitter 5 = Collector 1 2 5 Isolated Tab
Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250μA, VGE = 0V = 250μA, VCE = VGE
Characteristic Values Min. Typ. Max. 4000 3.0 5.0 V V
Applications Capacitor Discharge Pulser Circuits
VCE = 0.8 VCES, VGE = 0V Note 2, TJ = 100°C VCE = 0V, VGE = ±20V IC IC = 30A, VGE = 15V, Note 1 = 90A
50 μA 3 mA ±200 3.1 5.2 nA V V
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DS99978C(11/09)
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