Document
High Voltage IGBT
For Capacitor Discharge Applications
( Electrically Isolated Tab)
IXGF36N300
VCES = 3000V = 36A IC25 VCE(sat) ≤ 2.7V
ISOPLUS i4-PakTM
Symbol VCES VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC VISOL Weight
Test Conditions TJ = 25°C to 150°C Continuous Transient TC = 25°C TC = 110°C TC = 25°C, VGE = 20V, 1ms VGE = 20V, TVJ = 125°C, RG = 2Ω Clamped Inductive Load TC = 25°C
Maximum Ratings 3000 ± 20 ± 30 36 18 400 ICM = 300 VCE ≤ 0.8 • VCES 160 -55 ... +150 150 -55 ... +150 W °C °C °C °C °C Nm/lb-in. V~ g Applications Capacitor Discharge Pulser Circuits Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4000V Electrical Isolation High Peak Current Capability Low Saturation Voltage Molding Epoxies Meet UL 94 V-0 Flammability Classification V V V A A A A Features
1 = Gate 2 = Emitter 5 = Collector 1 2 5
Isolated Tab
1.6 mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Force 50/60Hz, 1 minute
300 260 20..120/4.5..27 4000 5
Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250μA, VGE = 0V = 250μA, VCE = VGE
Characteristic Values Min. Typ. Max. 3000 3.0 5.0 V V
Advantages High Power Density Easy to Mount
VCE = 0.8 • VCES, VGE = 0V Note 2 ,TJ = 125°C VCE = 0V, VGE = ±20V IC IC = 36A, VGE = 15V, Note 1 = 100A
50 μA 2 mA ±200 2.7 5.2 nA V V
© 2009 IXYS CORPORATION, All Rights Reserved
DS99979C(11/09)
Free Datasheet http://www.datasheet4u.com/
IXGF36N300
Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs IC(ON) Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf RthJC RthCS RthJA Resistive Switching Times IC = 36A, VGE = 15V VCE = 1500V, RG = 2Ω IC = 30A, VGE = 15V, VCE = 600V VCE = 25V, VGE = 0V, f = 1MHz IC = 36A, VCE = 10V, Note 1 VGE = 15V, VCE = 20V, Note 1 Characteristic Values Min. Typ. Max. 15 25 360 2690 123 34 136 21 52 36 185 215 540 0.15 30 S A pF pF pF nC nC nC ns ns ns ns 0.78 °C/W °C/W °C/W
Pin 1 = Gate Pin 2 = Emitter Pin 3 = Collector Tab 4 = Isolated
ISOPLUS i4-PakTM (HV) Outline
Notes: 1. Pulse test, t < 300μs, duty cycle, d < 2%.
2. Device must be heatsunk for high-temperature leakage current measurements to avoid thermal runaway.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXGF36N300
Fig. 1. Output Characteristics @ T J = 25ºC
80 70 60 VGE = 25V 20V 15V 13V 11V 400 350 300 13V VGE = 25V 20V 15V
Fig. 2. Extended Output Characteristics @ T J = 25ºC
50 40 30 20 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
IC - Amperes
IC - Amperes
9V
250 200 150 100 50 0 9V 11V
7V
5V
7V 5V 0 2 4 6 8 10 12 14 16 18 20
3.5
4.0
VCE - Volts
VCE - Volts
Fig. 3. Output Characteristics @ T J = 125ºC
80 70 60 VGE = 25V 20V 15V 13V 11V 9V 1.8 VGE = 15V 1.6
Fig. 4. Dependence of VCE(sat) on Junction Temperature
I
C
= 72A
VCE(sat) - Normalized
IC - Amperes
50 40 30 20 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
1.4
1.2 I 1.0
C
= 36A
7V
5V
0.8 I 0.6 4.5 5.0 -50 -25 0 25
C
= 18A 75 100 125 150
4.0
50
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage
6.0 5.5 5.0 4.5 TJ = 25ºC 80 70 60
Fig. 6. Input Admittance
4.0 3.5 3.0 2.5 2.0 18A 1.5 5 6 7 8 9 36A
I
C
= 72A
IC - Amperes
VCE - Volts
50 40 30 20 10 0 TJ = 125ºC 25ºC - 40ºC
10
11
12
13
14
15
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
VGE - Volts
VGE - Volts
© 2009 IXYS CORPORATION, All Rights Reserved
IXGF36N300
Fig. 7. Transconductance
40 35 30 TJ = - 40ºC 16 14 12 10 8 6 4 2 0 0 10 20 30 40 50 60 70 80 90 0 20 40 60 80 100 120 140 VCE = 600V I C = 30A I G = 10mA
Fig. 8. Gate Charge
25ºC
g f s - Siemens
20 15 10 5 0
IC - Amperes
VGE - Volts
25
125ºC
QG - NanoCoulombs
Fig. 9. Reverse-Bias Safe Operating Area
350 300 10,000
Fig. 10. Capacitance
f = 1 MHz
Capacitance - PicoFarads
250
Cies 1,000
IC - Amperes
200 150 100 50 0 500
Coes 100
TJ = 125ºC RG = 2Ω dv / dt < 10V / ns
Cres 10 0 5 10 15 20 25 30 35 40
750
1000
1250
1500
1750
2000
2250
2500
2750
3000
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1.000
Z(th)JC - ºC / W
0.100
0.010
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGF36N300
Fig. 12. Resistive Turn-on Rise Time vs. Junction Temperature
450 400 350 RG = 2Ω , VGE = 15V VCE = 1500V 450 400 350 300 250 200 I C = 36A 150 100 25 35 45 55 65 75 85 95 105 115 125 150 100 15 20 25 30 35 40 45 50 55 60 65 70 75 TJ = 25ºC RG = 2Ω , VGE = 15V VCE = 1500V TJ = 125º.