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IXGF36N300 Dataheets PDF



Part Number IXGF36N300
Manufacturers IXYS
Logo IXYS
Description High Voltage IGBT
Datasheet IXGF36N300 DatasheetIXGF36N300 Datasheet (PDF)

High Voltage IGBT For Capacitor Discharge Applications ( Electrically Isolated Tab) IXGF36N300 VCES = 3000V = 36A IC25 VCE(sat) ≤ 2.7V ISOPLUS i4-PakTM Symbol VCES VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC VISOL Weight Test Conditions TJ = 25°C to 150°C Continuous Transient TC = 25°C TC = 110°C TC = 25°C, VGE = 20V, 1ms VGE = 20V, TVJ = 125°C, RG = 2Ω Clamped Inductive Load TC = 25°C Maximum Ratings 3000 ± 20 ± 30 36 18 400 ICM = 300 VCE ≤ 0.8 • VCES 160 -55 ... +150.

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High Voltage IGBT For Capacitor Discharge Applications ( Electrically Isolated Tab) IXGF36N300 VCES = 3000V = 36A IC25 VCE(sat) ≤ 2.7V ISOPLUS i4-PakTM Symbol VCES VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC VISOL Weight Test Conditions TJ = 25°C to 150°C Continuous Transient TC = 25°C TC = 110°C TC = 25°C, VGE = 20V, 1ms VGE = 20V, TVJ = 125°C, RG = 2Ω Clamped Inductive Load TC = 25°C Maximum Ratings 3000 ± 20 ± 30 36 18 400 ICM = 300 VCE ≤ 0.8 • VCES 160 -55 ... +150 150 -55 ... +150 W °C °C °C °C °C Nm/lb-in. V~ g Applications Capacitor Discharge Pulser Circuits Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4000V Electrical Isolation High Peak Current Capability Low Saturation Voltage Molding Epoxies Meet UL 94 V-0 Flammability Classification V V V A A A A Features 1 = Gate 2 = Emitter 5 = Collector 1 2 5 Isolated Tab 1.6 mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Force 50/60Hz, 1 minute 300 260 20..120/4.5..27 4000 5 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250μA, VGE = 0V = 250μA, VCE = VGE Characteristic Values Min. Typ. Max. 3000 3.0 5.0 V V Advantages High Power Density Easy to Mount VCE = 0.8 • VCES, VGE = 0V Note 2 ,TJ = 125°C VCE = 0V, VGE = ±20V IC IC = 36A, VGE = 15V, Note 1 = 100A 50 μA 2 mA ±200 2.7 5.2 nA V V © 2009 IXYS CORPORATION, All Rights Reserved DS99979C(11/09) Free Datasheet http://www.datasheet4u.com/ IXGF36N300 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs IC(ON) Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf RthJC RthCS RthJA Resistive Switching Times IC = 36A, VGE = 15V VCE = 1500V, RG = 2Ω IC = 30A, VGE = 15V, VCE = 600V VCE = 25V, VGE = 0V, f = 1MHz IC = 36A, VCE = 10V, Note 1 VGE = 15V, VCE = 20V, Note 1 Characteristic Values Min. Typ. Max. 15 25 360 2690 123 34 136 21 52 36 185 215 540 0.15 30 S A pF pF pF nC nC nC ns ns ns ns 0.78 °C/W °C/W °C/W Pin 1 = Gate Pin 2 = Emitter Pin 3 = Collector Tab 4 = Isolated ISOPLUS i4-PakTM (HV) Outline Notes: 1. Pulse test, t < 300μs, duty cycle, d < 2%. 2. Device must be heatsunk for high-temperature leakage current measurements to avoid thermal runaway. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGF36N300 Fig. 1. Output Characteristics @ T J = 25ºC 80 70 60 VGE = 25V 20V 15V 13V 11V 400 350 300 13V VGE = 25V 20V 15V Fig. 2. Extended Output Characteristics @ T J = 25ºC 50 40 30 20 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 IC - Amperes IC - Amperes 9V 250 200 150 100 50 0 9V 11V 7V 5V 7V 5V 0 2 4 6 8 10 12 14 16 18 20 3.5 4.0 VCE - Volts VCE - Volts Fig. 3. Output Characteristics @ T J = 125ºC 80 70 60 VGE = 25V 20V 15V 13V 11V 9V 1.8 VGE = 15V 1.6 Fig. 4. Dependence of VCE(sat) on Junction Temperature I C = 72A VCE(sat) - Normalized IC - Amperes 50 40 30 20 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 1.4 1.2 I 1.0 C = 36A 7V 5V 0.8 I 0.6 4.5 5.0 -50 -25 0 25 C = 18A 75 100 125 150 4.0 50 VCE - Volts TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 6.0 5.5 5.0 4.5 TJ = 25ºC 80 70 60 Fig. 6. Input Admittance 4.0 3.5 3.0 2.5 2.0 18A 1.5 5 6 7 8 9 36A I C = 72A IC - Amperes VCE - Volts 50 40 30 20 10 0 TJ = 125ºC 25ºC - 40ºC 10 11 12 13 14 15 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 VGE - Volts VGE - Volts © 2009 IXYS CORPORATION, All Rights Reserved IXGF36N300 Fig. 7. Transconductance 40 35 30 TJ = - 40ºC 16 14 12 10 8 6 4 2 0 0 10 20 30 40 50 60 70 80 90 0 20 40 60 80 100 120 140 VCE = 600V I C = 30A I G = 10mA Fig. 8. Gate Charge 25ºC g f s - Siemens 20 15 10 5 0 IC - Amperes VGE - Volts 25 125ºC QG - NanoCoulombs Fig. 9. Reverse-Bias Safe Operating Area 350 300 10,000 Fig. 10. Capacitance f = 1 MHz Capacitance - PicoFarads 250 Cies 1,000 IC - Amperes 200 150 100 50 0 500 Coes 100 TJ = 125ºC RG = 2Ω dv / dt < 10V / ns Cres 10 0 5 10 15 20 25 30 35 40 750 1000 1250 1500 1750 2000 2250 2500 2750 3000 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance 1.000 Z(th)JC - ºC / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXGF36N300 Fig. 12. Resistive Turn-on Rise Time vs. Junction Temperature 450 400 350 RG = 2Ω , VGE = 15V VCE = 1500V 450 400 350 300 250 200 I C = 36A 150 100 25 35 45 55 65 75 85 95 105 115 125 150 100 15 20 25 30 35 40 45 50 55 60 65 70 75 TJ = 25ºC RG = 2Ω , VGE = 15V VCE = 1500V TJ = 125º.


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