MSD601
NPN General Purpose Transistors
P b Lead(Pb)-Free
1 2 3
SOT-23
MAXIMUM RATINGS(Ta=25°C)
Rating
Collector-Emitte...
MSD601
NPN General Purpose
Transistors
P b Lead(Pb)-Free
1 2 3
SOT-23
MAXIMUM RATINGS(Ta=25°C)
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector Current - Peak Total Device Dissipation TA=25°C Junction Temperature Storage Temperature
Symbol
VCEO VCBO VEBO IC IC(P) PD Tj Tstg
Value
50 60 7.0 100 200 0.2 +150 -55 to +150
Unit
V V V mA mA mW °C °C
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1/6
18-Sep-06
MSD601
ELECTRICAL CHARACTERISTICS Characteristics
Collector-Emitter Breakdown Voltage IC = 2.0mA, IE = 0A Collector-Base Breakdown Voltage IC = 10µA, IB = 0A Emitter-Base Breakdown Voltage IE= 10µA, I C=0 Collector Cutoff Current VCB = 45V, I C = 0A Emitter Cutoff Current VEB = 10V, I C = 0A
Symbol
V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO
Min
50 60
Typ
-
Max
-
Unit
V V
7.0 -
-
0.1 0.1
V µA µA
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage IC = 100mA, I B = 10mA DC Current Transfer Ration1 VCE =2.0V, IC = 100mA 1.Pulse Test : Pulse Width ≤ 300µs, D.C. ≤ 2% VCE(sat) 0.5 V
hFE
90
-
-
CLASSIFICATION hFE @VCE = 10V, I C = 2.0mA Rank Range Marking R 210-340 YR S 290-460 YS
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18-Sep-06
MSD601
SOT-23 Outline Dimension
A
Unit:mm
SOT-23
B C
TOP VIEW D E G H
K J L M
Dim A B C D E G H J K L M
Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076
Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25
0.95 0.95
2.0
0.9 0.8
WEITRON
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