isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC1433
DESCRIPTION ·With TO-3 Package ·High voltage ·Wide are...
isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SC1433
DESCRIPTION ·With TO-3 Package ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO VEBO
IC PC TJ
Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation
Junction Temperature
Tstg
Storage Temperature Range
600
V
400
V
5
V
5
A
50
W
-65~200
℃
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance, Junction to Case
3.5
℃/W
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isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SC1433
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC=5A; IB= 1A
VBE(sat) Base-Emitter Saturation Voltage
IC=5A; IB=1A
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
hFE
DC Current Gain
IC=1A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 600V ; IE= 0
IEBO
Emitter Cutoff Current
VEB=5V; IC= 0
MIN TYP. MAX UNIT
1.0
V
2.0
V
400
V
5
V
20
300
100 uA
100 uA
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