BTP8550A3

CYStech Electronics Corp. General Purpose PNP Epitaxial Planar Transistor BTP8550A3 Spec. No. : C313A3 Issued Date : 2003.07.30 Revised Date : 2007.04.19 Page No. : 1/5 Description The BTP8550A3 is designed for use in output amplifier of portable radios in class B push pull operation. Features Large collector current , IC= -1.5A Low VCE(sat) Complementary to BTN8050A3 Pb-free package Symbol BTP8550A3 Outline TO-92 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature BTP8550A3 Symbol VCBO VCEO VEBO IC IB Pd RθJA Tj Tstg ECB Limits -40 -25 -6 -1.5 -0.5 625 200 150 -55~+150 Unit V V V A A mW °C/W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C313A3 Issued Date : 2003.07.30 Revised Date : 2007.04.19 Page No. : 2/5 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *VBE(on) *hFE 1 *hFE 2 *hFE 3 fT Cob Min. -40 -25 -6 100 120 40 100 - Typ. - Classification Of hFE 2 Rank Range C 120~200 Max. - -100 -100 -0. 5 -1.2 -1 500 20 D 160~320 Unit V V V nA nA V V V MHz pF Test Conditions IC=-100μA IC=-2mA IE=-100μA VCB=-35V VEB=-6V IC=-800mA, IB=-80mA IC=-800mA, IB=-80mA VCE=-1V, IC=-10mA VCE=-1V, IC=-5mA VCE=-1V, IC=-100mA VCE=-1V, IC=-800mA VCE=-10V, IC=-50mA, f=100MHz VCB=-10V, f=1MHz...