BTP8550BA3

CYStech Electronics Corp. General Purpose PNP Epitaxial Planar Transistor BTP8550BA3 Spec. No. : C313A3-B Issued Date : 2004.03.04 Revised Date : 2009.02.02 Page No. : 1/6 Description The BTP8550BA3 is designed for use in 2W output amplifier of portable radios in class B push pull operation. Features Large collector current , IC= -1.5A Low VCE(sat) Complementary to BTN8050BA3 Pb-free & Halogen-free package Symbol BTP8550BA3 Outline TO-92 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation(TA=25°C) Total Power Dissipation(TC=25°C) Thermal Resistance, junction to ambient Thermal Resistance, junction to case Junction Temperature Storage Temperature BTP8550BA3 Symbol VCBO VCEO VEBO IC IB Pd Pd RθJA RθJC Tj Tstg EBC Limits -40 -25 -6 -1.5 -0.5 1 2 125 62.5 150 -55~+150 Unit V V V A A W W °C/W °C/W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C313A3-B Issued Date : 2004.03.04 Revised Date : 2009.02.02 Page No. : 2/6 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *VBE(on) *hFE 1 *hFE 2 *hFE 3 fT Cob Min. -40 -25 -6 45 85 40 100 - Typ. - Classification Of hFE 2 Rank B Range 85~160 Max. -100 -100 -0. 5 -1.2 -1 500 20 Unit V V V nA nA V V V MHz pF Test Conditions IC=-100μA IC=-2mA IE=-100μA VCB=-35V VEB=-6V IC=-800mA, IB=-80mA IC=-800mA, IB=-80mA ...