CYStech Electronics Corp.
General Purpose PNP Epitaxial Planar Transistor
BTP8550BA3
Spec. No. : C313A3-B Issued Date :...
CYStech Electronics Corp.
General Purpose
PNP Epitaxial Planar
Transistor
BTP8550BA3
Spec. No. : C313A3-B Issued Date : 2004.03.04 Revised Date : 2009.02.02 Page No. : 1/6
Description
The BTP8550BA3 is designed for use in 2W output amplifier of portable radios in class B push pull operation.
Features
Large collector current , IC= -1.5A Low VCE(sat) Complementary to BTN8050BA3 Pb-free & Halogen-free package
Symbol
BTP8550BA3
Outline
TO-92
B:Base C:Collector E:Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation(TA=25°C) Total Power Dissipation(TC=25°C) Thermal Resistance, junction to ambient Thermal Resistance, junction to case Junction Temperature Storage Temperature
BTP8550BA3
Symbol
VCBO VCEO VEBO
IC IB Pd Pd RθJA RθJC Tj
Tstg
EBC
Limits
-40 -25 -6 -1.5 -0.5 1 2 125 62.5 150
-55~+150
Unit
V V V A A W W
°C/W °C/W
°C
°C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C313A3-B Issued Date : 2004.03.04 Revised Date : 2009.02.02 Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
BVCBO BVCEO BVEBO
ICBO IEBO *VCE(sat) *VBE(sat) *VBE(on) *hFE 1 *hFE 2 *hFE 3
fT Cob
Min.
-40 -25 -6
45 85 40 100 -
Typ.
-
Classification Of hFE 2
Rank
B
Range
85~160
Max.
-100 -100 -0. 5 -1.2 -1 500 20
Unit
V V V nA nA V V V MHz pF
Test Conditions
IC=-100μA IC=-2mA IE=-100μA VCB=-35V VEB=-6V IC=-800mA, IB=-80mA IC=-800mA, IB=-80mA ...