SS150TC60110

SS150TA60110, SS150TC60110, SS150TI60110 Silicon Carbide Schottky Diode Part Number SS150TA60110 SS150TC60110 SS150TI60110 VRRM (V) 600 600 600 IF(AVG) (A) 10 10 10 Configuration Triple Common Anode Triple Common Cathode Triple Independent Triple Independent (TI) VRRM = 600 V IF(AVG) = CJ 10 A = 80 pF Triple Anode (TA) Triple Cathode (TC) A = Anode C = Cathode Symbol Parameter VRRM VRSM VDC IF(AVG) IFRM TVJ TSTG PTOT Symbol Repetitive Peak Reverse Voltage Repetitive Surge Reverse Voltage DC Blocking Voltage Average Forward Current TJ = 175°C Test Conditions Maximum Ratings 600 600 600 10 25 -55 to +175 -55 to +175 60 V V V A A Features Repetitive Peak Forward Surge Current TVJ = 45°C, tP = 10 ms Half Sine Wave D = 0.3 Operating Virtual Junction Temperature Storage Temperature TC = 25 °C (20 W/device) 600 V SiC Schottky Diode Surface Mount Package Zero Reverse Recovery Zero Forward Recovery High Frequency Operation Temperature Independent Behavior Positive Temperature Coefficient for VF Applications °C °C W MHz Switch Mode Power Supplies High Frequency Converters Resonant Converters Rectifier Circuits Parameter Test Conditions Characteristic Values Typ. Max. 1.8 2.4 50 200 TJ = 25°C unless otherwise specified Units V VF IR CJ Forward Voltage IF = 5 A, TJ = 25°C TJ = 175°C VR = 600 V, TJ = 25°C TJ = 175°C f = 1 MHz, VR = 0 V VR = 200 V VR = 600 V 1.6 2 10 20 485 85 80 2.5 Reverse Current µA Junction Capacitance pF RTHJC TL Isolati...