2SA1708

Ordering number:ENN3094 www.DataSheet4U.com PNP/NPN Epitaxial Planar Silicon Transistors 2SA1708/2SC4488 High-Voltage Switching Applications Features · Adoption of FBET, MBIT processes. · High breakdown voltage, large current capacity. · Fast switching speed. Package Dimensions unit:mm 2064A [2SA1708/2SC4488] 2.5 1.45 6.9 1.0 4.5 1.0 0.6 1.0 0.9 1 2 3 0.5 0.45 ( ) : 2SA1708 2.54 2.54 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 1 : Emitter 2 : Collector 3 : Base SANYO : NMP Ratings (–)120 (–)100 (–)6 (–)1 (–)2 1 150 –55 to +150 4.0 1.0 Unit V V V A A W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE fT VCB=(–)100V, IE=0 VEB=(–)4V, IC=0 VCE=(–)5V, IC=(–)100mA VCE=(–)10V, IC=(–)100mA 100* 120 Conditions Ratings min typ max (–)100 (–)100 400* MHz Unit nA nA * : The 2SA1708/2SC4488 are classified by 100mA hFE as follows : Rank hFE R 100 to 200 S 140 to 280 T 200 to 400 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s c...