1N914B

1N4148 / 1N4448 / 1N914B Taiwan Semiconductor 500mW, High Speed Switching Diode FEATURES ● Low power loss, high efficiency ● Ideal for automated placement ● High surge current capability ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Switching mode power supply (SMPS) KEY PARAMETERS PARAMETER VALUE UNIT IF 150 mA VRRM 100 V IFSM 2 A VF at IF=100mA 1 V TJ MAX Package Configuration 150 °C DO-35 Singal die MECHANICAL DATA ● Case: DO-35 ● Packing code with suffix "G" means green compound (halogen-free) ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Polarity: Indicated by cathode band ● Weight: 125 ± 4 mg ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL 1N4148 1N4448 1N914B Power dissipation PD 500 Repetitive peak reverse voltage VRRM 100 Non-Repetitive peak forward surge current Pluse width = 1μs, Square wave IFSM 2 Non-Repetitive peak forward current IFM 450 Forward current IF 150 Junction temperature range TJ -65 to +150 Storage temperature range TSTG -65 to +150 UNIT mW V A mA mA °C °C THERMAL PERFORMANCE PARAMETER Junction-to-ambient thermal resistance SYMBOL RӨJA TYP 240 UNIT °C/W 1 Version:J1804 1N4148 / 1N4448 / 1N914B Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN 1N4448,1N914B Forward voltage per diode (1) 1N414...