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1N914B

Luguang Electronic Technology

Small Signal Switching Diodes

1N914/1N914A/1N914B Small Signal Switching Diodes REVERSE VOLTAGE: 75 V CURRENT£º 75 mA Features ¡ó ¡ó ¡ó Glass sealed...


Luguang Electronic Technology

1N914B

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1N914/1N914A/1N914B Small Signal Switching Diodes REVERSE VOLTAGE: 75 V CURRENT£º 75 mA Features ¡ó ¡ó ¡ó Glass sealed envelope. (MSD) VRM=100V guaranteed High reliability DO - 35 Mechanical Data ¡ó ¡ó ¡ó Case: DO-35, glass case Polarity: Color band denotes cathode Weight: 0.004 ounces, 0.13 grams o Dimensions in millimeters Maximum Ratings Rating at 25 C ambient temperature unless otherwise specified. 1N914,1N914A,1N914B Maximum DC reverse voltage Maximum recurrent peak reverse voltage Average forward rectified current half wave rectification with resistive load Forward surge current t<1ms t=1ms t=1s Power dissipation (note) Junction temperature Storage temperature range UNITS V V mA A mW ¡æ ¡æ VR VRM IO IFSM Ptot Tj TSTG 75 100 75 4.0 1.0 0.5 250 175 - 65 --- + 175 Note:Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. Electrical Characteristics Rating at 25 C ambient temperature unless otherwise specified. o Min Forw ard voltage @1N914,1N914A,I F=10mA 1N914B,I F=5mA 1N914B,I F=100mA Leakage current @V R=20V @V R=75V @V R=20V,Tj=150¡ Capacitance @ V R=0V,f=1MHZ Typ - Max 1.0 0.72 1.0 25 5 50 4 8 2.5 500 UNITS V nA µA æ µA pF ns V ¡æ /W VF IR Ctot trr Vfr RθjA 0.62 - Reverse recovery time @I F=10mA,IR=10mA, RL=100Ω,measured at I R=1mA Voltage rise w hen sw itching on tested w ith 50mA pulses t r=20ns Thermal resistance junction to ambient (note ) Note:Valid provided that leads at a distance of 8 mm from case are k...




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