Ordering number:EN3097
Features
· High breakdown voltage (VCEO≥300V). · Excellent high frequency characteristic. · Adopt...
Ordering number:EN3097
Features
· High breakdown voltage (VCEO≥300V). · Excellent high frequency characteristic. · Adoption of MBIT process.
PNP/
NPN Epitaxial Planar Silicon
Transistors
2SA1710/2SC4490
High-Definition CRT Display Video Output Applications
Package Dimensions
unit:mm 2064
[2SA1710/2SC4490]
( ) : 2SA1710
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Output Capacitance
ICBO IEBO hFE
fT VCE(sat)
VBE(sat) Cob
VCB=(–)200V, IE=0 VEB=(–)4V, IC=0 VCE=(–)10V, IC=(–)10mA VCE=(–)30V, IC=(–)10mA IC=(–)20mA, IB=(–)2mA
IC=(–)20mA, IB=(–)2mA VCB=(–)30V, f=1MHz
E : Emitter C : Collector B : Base
SANYO : NMP
Ratings (–)300 (–)300 (–)5 (–)100 (–)200 1 150
–55 to +150
Unit V V V mA mA W ˚C ˚C
Ratings min typ
70* 70
(3.1) 2.6
max (–)100 (–)100
280*
(–)0.6 (–)1.0
Unit
nA nA
MHz V V pF pF
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft...