2SA1726

2SA1726 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4512) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SA1726 –80 –80 –6 –6 –3 50(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Audio and General Purpose (Ta=25°C) 2SA1726 –10max –10max –80min 50min∗ –0.5max 20typ 150typ V pF 12.0min 4.0max sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=–80V VEB=–6V IC=–25mA VCE=–4V, IC=–2A IC=–2A, IB=–0.2A VCE=–12V, IE=0.5A VCB=–10V, f=1MHz External Dimensions MT-25(TO220) 3.0±0.2 10.2±0.2 4.8±0.2 2.0±0.1 Unit µA µA V 16.0±0.7 8.8±0.2 a b ø3.75±0.2 MHz 1.35 ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 2.5 B C E 0.65 +0.2 -0.1 2.5 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) –30 RL (Ω) 10 IC (A) –3 VBB1 (V) –10 VBB2 (V) 5 IB1 (A) –0.3 IB2 (A) 0.3 ton (µs) 0.18typ tstg (µs) 1.10typ tf (µs) 0.21typ Weight : Approx 2.6g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) –6 –2 0 0m A –1 m 50 V CE ( sa t ) – I B Characteristics (Typical) –3 Collector-Emitter Saturation Voltage V C E (s at) (V) I C – V BE Temperature Characteristics (Typical) –6 (V CE =–4V) A –1 00 m A –8 0m A Collector Current I C (A) Collector Current I C (A) –4 –50mA –2 –4 –30mA p) Tem se (Ca se T –2 –1 I C =–6A –4A –2A 0 0 –0.5 –1.0 –1.5 –2 ˚C I B =–10mA 125 (Ca 0 0 –1 –2 –3 –4 0 0 –0.5 –30˚C 25˚C (Cas –1 e Te –20mA emp mp) ) –1.5 Col...