TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1735
Power Amplifier Applications Power Switching Applica...
TOSHIBA
Transistor Silicon
PNP Epitaxial Type (PCT process)
2SA1735
Power Amplifier Applications Power Switching Applications
2SA1735
Unit: mm
Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −500 mA) High speed switching time: tstg = 0.25 μs (typ.) Small flat package
PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SC4540
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current
Collector power dissipation
Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC PC (Note 1)
Tj Tstg
−60 −50 −6 −1 −0.2 500
1000
150 −55 to 150
V V V A A
mW
°C °C
PW-MINI JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t)
Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and th...