2SA1735

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1735 Power Amplifier Applications Power Switching Applications 2SA1735 Unit: mm Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −500 mA) High speed switching time: tstg = 0.25 μs (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SC4540 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC PC (Note 1) Tj Tstg −60 −50 −6 −1 −0.2 500 1000 150 −55 to 150 V V V A A mW °C °C PW-MINI JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.) Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and th...