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2SA1739

Panasonic Semiconductor

Silicon PNP epitaxial planer type Transistor

Transistor 2SA1739 Silicon PNP epitaxial planer type For high speed switching Unit: mm 2.1±0.1 s Features q q q 0.42...


Panasonic Semiconductor

2SA1739

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Description
Transistor 2SA1739 Silicon PNP epitaxial planer type For high speed switching Unit: mm 2.1±0.1 s Features q q q 0.425 1.25±0.1 0.425 High-speed switch (pair with 2SC3938) Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) 0.65 1 2.0±0.2 1.3±0.1 0.65 3 2 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 0.9±0.1 –15 –15 –4 –100 –50 150 150 –55 ~ +150 V V V mA mA mW ˚C ˚C 0.7±0.1 Ratings Unit 0 to 0.1 0.2±0.1 1:Base 2:Emitter 3:Collector EIAJ:SC–70 S–Mini Type Package Marking symbol : AX s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Turn-off time Storage time (Ta=25˚C) Symbol ICBO IEBO hFE1* hFE2 VCE(sat) fT Cob ton toff tstg Conditions VCB = –8V, IE = 0 VEB = –3V, IC = 0 VCE = –1V, IC = –10mA VCE = –1V, IC = –1mA IC = –10mA, IB = –1mA VCB = –10V, IE = 10mA, f = 200MHz VCB = –5V, IE = 0, f = 1MHz (Note 1) Next page (Note 1) Next page (Note 1) Next page 800 50 30 – 0.1 1500 1 12 20 19 – 0.2 V MHz pF ns ns ns min typ max...




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