KI5513DC

SMD Type Complementary 20-V (D-S) MOSFET KI5513DC IC IC PIN Configuration Absolute Maximum Ratings TA = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 )* TA = 25 TA = 85 Pulsed Drain Current Continuous Source Current (Diode Conduction)* Maximum Power Dissipation* TA = 25 TA = 85 Operating Junction and Storage Temperature Range *Surface Mounted on 1" X 1" FR4 Board. TJ, Tstg IDM IS PD 1.8 2.1 1.1 Symbol VDS VGS ID 4.2 3 10 0.9 1.1 0.6 -1.8 2.1 1.1 -55 to 150 3.1 2.2 N-Channel 5 secs Steady State 20 12 -2.9 -2.1 -10 -0.9 1.1 0.6 -2.1 -1.5 P-Channel 5 secs Steady State -20 V V A A A A W W Unit Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient* Maximum Junction-to-Case (Drain) *Surface Mounted on 1" X 1" FR4 Board. t 5 sec Symbol RthJA RthJF Typ 50 90 30 Max 60 110 40 /W Unit Steady State Steady State www.kexin.com.cn 1 Free Datasheet http://www.datasheet4u.com/ SMD Type KI5513DC Electrical Characteristics TJ = 25 Parameter Gate Threshold Voltage Gate Body Leakage Symbol VGS( th) IGSS Testconditons VDS = VGS, ID = 250 A VDS = VGS, ID = -250 VDS = 0 V VGS = 12 V VDS = 0 V VGS = 12 V VDS = 20V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = -20V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 70 VDS = -20V, VGS = 0 V, TJ = 70 On State Drain Currenta ID(on) VDS VDS 5 V, VGS = 4.5 V -5 V, VGS = -4.5 V A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Channel VDS =...