Document
WPM3401
WPM3401
P-Channel Enhancement Mode MOSFET
http://www.jestek.com.cn
Description
The WPM3401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching.
Features
z z z z z -30V/-4.3A,RDS(ON)< 65m@VGS=- 10V -30V/-3.4A,RDS(ON)< 90m@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT23 package design
P−Channel MOSFET
G
1 3 D
S
2
Top View
Application
z z z z z Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch
G 1 Gate Drain 3
WP1U
2 Source
U = Date Code WP1 = Specific Device Code
Order information
Part Number WPM3401-3/TR Package SOT23 Shipping
3000 Tape&Reel
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Page 1
Free Datasheet http://www.datasheet4u.com/
Parameter
WPM3401
Absolute Maximum Ratings (TA=25 к! unless otherwise specified)
Parameter Parameter
VDS VGS ID IDM PD TJ Tstg RșJA
Symbol l
Drain-Source voltage Gate-Source Voltage Continuous Drain Steady-State TA=25ć Current Steady-State TA=70ć Pulse Drain Current Power Dissipation TA=25ć TA=70ć Operating Junction Temperature Range Storage Temperature Range Thermal Resistance-Junction to Ambient
Value
-30 ±20 -4.3 -3.4 -20 2.8 1.8 -55~150 70
Unit
V V A A W ć ć/W
Electrical Characteristics
(TA=25к Unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time
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Symbol
Conditions
Min.
Typ
Max.
Unit
V(BR)DSS VGS=0V,ID=-250uA VGS(th) VDS=VGS,ID=-250uA IGSS IDSS ID(on) RDS(on) gfs VSD VDS=0V,VGS=±20V VDS=-30V,VGS=0V VDS=-30V,VGS=0V TJ=85к VDS= -5V,VGS =-4.5V VGS=-10V,ID=-7.2A VGS=-4.5V,ID=-5.0A VDS=-15V,ID=-5.7A IS=-1.3A,VGS =0V
-30 -0.8 -1.37 -2.5 ±100 -1 -5 -10 0.055 0.076 13 -0.72 0.065 0.090 -1.0
V nA uA A ȍ S V
Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf
Page 2
14 VDS=-15V,VGS=-10V ID= -3.5A 3.1 3 700 VDS=-15V,VGS=0V f=1MHz 120 75 8 VDD=-15V,RL=15ȍ IDŁ-1.0A,VGEN=-10V RG=6ȍ 5 28 13
18 nC
pF 18 18 50 35 nS
Free Datasheet http://www.datasheet4u.com/
WPM3401
Typical Performance Characteristis
24 VGS=10V 20
180
ID,Drain Current(A)
VGS=6V 16 12 8 VGS=3V 4 0 VGS=4V
RDS(ON)ON Resistance(mOhm)
150
120 VGS=4.5V 90 VGS=6V
60 V GS=10V 30 0 5
0
VDS,Drain-Source voltage(V)
1
2
3
4
5
ID, Drain Current(A)
10
15
20
Drain Current VS Drain-Source voltage
Drain Current vs ON Resistance
0.20
25 VDS=2V
RDS(ON) ON Resistance(Ohm)
0.16
ID,Drain Current(A)
ID=5.7A
20
0.12
15
10
0.08
5
0.04
0
0
VGS,Gate-Source Voltage(V)
2
4
6
8
10
0
1
VGS,Gate-Source Voltage(V)
2
3
4
5
6
Gate-Source Voltage vs ON Resistance
1.5
Drain Current VS Gate-Source Voltage
1.6 Normalized On-Resistance
IS, Source-Drain Current(A)
1.2
1.4
VGS=-10V VGS=-4.5V
0.9
1.2
0.6
0.3
1
ID=-5A
0.0 0.0
0.8
VDS,Drain-Source voltage(V)
0.2
0.4
0.6
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Drain Current VS Source-Drain Current
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On-Resistance vs. Junction
Free Datasheet http://www.datasheet4u.com/
WPM3401
10 9 8 7 -VGS (Volts) 6 5 4 3 2 1 0 0 2 4 6 8 -Qg (nC) 10 12 14 16 VDS=-15V ID=-6A Capacitance (pF)
1200 1000 Ciss 800 600 400 Coss 200 Crss 0 0 5 10 15 -VDS (Volts) 20 25 30
Gate-Charge Characteristics
100 TJ(Max)=150°C TA=25°C 10Ps Power (W) -ID (Amps) 10 RDS(ON) limited 0.1s 1 100Ps 1ms 10ms 1s 10s DC 0.1 0.1 1 -VDS (Volts) 10 100 0 0.001 30 40
Capacitance Characteristics
TJ(Max)=150°C TA=25°C
20
10
0.01
0.1
1
10
100
1000
Pulse Width (s)
Maximum Forward Biased Safe Operating Area (Note E)
10 ZT JA Normalized Transient Thermal Resistance
Single Pulse Power Rating Junction-toAmbient (Note E)
D=Ton/T TJ,PK=TA+PDM.ZTJA.RTJA RTJA=40°C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Normalized Maximum Transient Thermal Impedance
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Page 4
Free Datasheet http://www.datasheet4u.com/
WPM3401
Packaging Information
SOT23 Package Outline Dimension
Symbol A A1 A2 b c D E E1 e e1 L L1 ș
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Dimensions In Millimeters Min Max 0.900 1.200 0.000 0.100 0.900 1.100 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8°
Page 5
Dimensions In Inches Min Max .