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K3P7V1000B-YC

Samsung semiconductor

64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM

K3P7V(U)1000B-YC 64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM FEATURES • Switchable organization 8,388,608 x 8(byte mode) 4,194,3...


Samsung semiconductor

K3P7V1000B-YC

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Description
K3P7V(U)1000B-YC 64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM FEATURES Switchable organization 8,388,608 x 8(byte mode) 4,194,304 x 16(word mode) Fast access time Random Access Time/Page Access Time 3.3V Operation : 100/30ns(Max.)@CL=50pF, 120/40ns(Max.)@C L=100pF 3.0V Operation : 120/40ns(Max.)@CL=100pF 8 Words / 16 Bytes page access Supply voltage : single +3.0V/ single +3.3V Current consumption Operating : 60mA(Max.) Standby : 50µA(Max.) Fully static operation All inputs and outputs TTL compatible Three state outputs Package K3P7V(U)1000B-YC : 48-TSOP1-1218 CMOS MASK ROM GENERAL DESCRIPTION The K3P7V(U)1000B-YC is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 8,388,608 x 8 bit(byte mode) or as 4,194,304 x 16 bit(word mode) depending on BHE voltage level.(See mode selection table) This device includes page read mode function, page read mode allows 8 words (or 16 bytes) of data to read fast in the same page, CE and A3 ~ A21 should not be changed. This device operates with 3.0V or 3.3V power supply, and all inputs and outputs are TTL compatible. Because of its asynchronous operation, it requires no external clock assuring extremely easy operation. It is suitable for use in program memory of microprocessor, and data memory, character generator. The K3P7V(U)1000B-YC is packaged in a 48-TSOP1. FUNCTIONAL BLOCK DIAGRAM Pin Name A21 . . . . . . . . A3 A0~A2 A-1 X BUFFERS AND DECODER MEMORY CELL MATR...




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