2SA1767

Transistor 2SA1767 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC1473A 5.0±0.2 Unit: mm 4.0±0.2 q High collector to emitter voltage VCEO. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings –300 –300 –5 –100 –70 750 150 –55 ~ +150 Unit V V V 13.5±0.5 5.1±0.2 s Features 0.45 –0.1 1.27 +0.2 0.45 –0.1 1.27 +0.2 mA mW ˚C ˚C 1 2 3 2.3±0.2 mA 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A s Electrical Characteristics Parameter Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol VCEO VEBO hFE fT Cob * Conditions IC = –100µA, IB = 0 IE = –1µA, IC = 0 VCE = –10V, IC = –5mA IC = –10mA, IB = –1mA VCB = –10V, IE = 10mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz min –300 –5 60 typ max Unit V V 150 – 0.6 50 7 V MHz pF VCE(sat) *h FE Rank classification Q 60 ~ 150 hFE Rank 1 Transistor PC — Ta 1000 –100 Ta=25˚C 900 –90 IB=–1.0mA –100 25˚C Ta=75˚C –80 2SA1767 IC — VCE –120 VCE=–10V IC — VBE Collector power dissipation PC (mW) Collector current IC (mA) –0.9mA –70 –60 –50 –40 –30 –0.3mA –20 –0.2mA –10 0 –0.1mA –0.8mA –0.7mA –0.6mA –0.5mA –0.4mA...