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STTH1212

STMicroelectronics

Ultrafast recovery - 1200 V diode

STTH1212 Ultrafast recovery - 1200 V diode Main product characteristics A K IF(AV) VRRM Tj VF (typ) trr (typ) 12 A 120...


STMicroelectronics

STTH1212

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Description
STTH1212 Ultrafast recovery - 1200 V diode Main product characteristics A K IF(AV) VRRM Tj VF (typ) trr (typ) 12 A 1200 V 175° C 1.25 V 50 ns A K TO-220AC STTH1212D Features and benefits ■ ■ ■ ■ ■ Ultrafast, soft recovery Very low conduction and switching losses High frequency and/or high pulsed current operation High reverse voltage capability High junction temperature K A NC D2PAK STTH1212G Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Such demanding applications include industrial power supplies, motor control, and similar mission-critical systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications. The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device. Order codes Part Number STTH1212D STTH1212G STTH1212G-TR Marking STTH1212D STTH1212G STTH1212G March 2006 Rev 1 www.st.com 1/9 9 Free Datasheet http://www.datasheet4u.com/ Characteristics STTH1212 1 Table 1. Symbol VRRM IF(RMS) IF(AV) IFRM IFSM Tstg Tj Characteristics Absolute ratings (limiting values at 25° C, unless otherwise specified) Parameter Repetitive peak reverse voltage RMS forward current Average...




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