STTH12T06

STTH12T06 600 V tandem extra fast diode Datasheet − production data Features High voltage rectifier Tandem diodes in series K A Very low switching losses Insulated device with internal ceramic Equal thermal conditions for both 300 V diodes Static and dynamic equilibrium of internal diodes are warranted by design A K TO-220AC ins STTH12T06DI Insulated package: – Capacitance: 7 pF – Insulated voltage: 2500 V rms Description This device is part of ST's second generation of 600 V tandem diodes. It has ultralow switchinglosses with a minimized QRR (6.5 nC) that makes it perfect for use in circuits working in hardswitching mode. In particular the VF/QRR trade-off positions this device between standard ultrafast diodes and silicon-carbide Schottky rectifiers in terms of price/performance ratio. The device offers a new positioning giving more flexibility to power-circuit designers looking for good performance while still respecting cost constraints. Featuring ST's Turbo 2 600 V technology, the device is particularly suited as a boost diode in continuous conduction mode power factor correction circuits. Table 1. Device summary Symbol IF(AV) VRRM trr (typ) IRM (typ) VF (typ) IFRM Tj (max) Value 12 A 600 V 15 ns 2.3 A 2.05 V 65 A 175 °C May 2013 This is information on a product in full production. Doc ID024431 Rev1 1/9 www.st.com 9 Free Datasheet http://www.datasheet4u.com/ Characteristics STTH12T06 1 Characteristics Table 2. Absolute ratings (limiting values...