FDMC86248

FDMC86248 N-Channel Power Trench® MOSFET September 2012 FDMC86248 N-Channel Power Trench® MOSFET 150 V, 13 A, 90 mΩ Features „ Max rDS(on) = 90 mΩ at VGS = 10 V, ID = 3.4 A „ Max rDS(on) = 125 mΩ at VGS = 6 V, ID = 2.9 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ 100% UIL Tested „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Applications „ Primary MOSFET „ MV synchronous rectifier Top Bottom S Pin 1 S S S G S S D D D G D D D D D Power 33 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) (Note 3) TC = 25 °C TA = 25 °C (Note 1a) Ratings 150 ±20 13 3.4 15 37 36 2.3 -55 to +150 mJ W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 3.4 53 °C/W Package Marking and Ordering Information Device Marking FDMC86248 Device FDMC86248 Package Power 33 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2012 Fairchild Semiconductor Corporation FDMC86248 Rev. C3 1 w...