Trench MOSFET. FDMC8651 Datasheet

FDMC8651 Datasheet PDF, Equivalent


Part Number

FDMC8651

Description

N-Channel Power Trench MOSFET

Manufacture

Fairchild Semiconductor

Total Page 7 Pages
PDF Download
Download FDMC8651 Datasheet


FDMC8651 Datasheet
July 2008
FDMC8651
N-Channel Power Trench® MOSFET
30 V, 20 A, 6.1 m
Features
General Description
„ Max rDS(on) = 6.1 mat VGS = 4.5 V, ID = 15 A
„ Max rDS(on) = 9.3 mat VGS = 2.5 V, ID = 12 A
„ Low Profile - 1 mm max in Power 33
„ 100% UIL Tested
„ RoHS Compliant
This device has been designed specifically to improve the
efficiency of DC/DC converters. Using new techniques in
MOSFET construction, the various components of gate charge
and capacitance have been optimized to reduce switching
losses. Low gate resistance and very low Miller charge enable
excellent performance with both adaptive and fixed dead time
gate drive circuits. Very low rDS(on) has been maintained to
provide a sub logic-level device.
Applications
„ Synchronous rectifier
„ 3.3 V input synchronous buck switch
Top Bottom
S Pin 1
S
S
G
D
D
D
D
Power 33
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±12
20
64
15
60
128
41
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
3
53
°C/W
Device Marking
FDMC8651
Device
FDMC8651
Package
Power 33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2008 Fairchild Semiconductor Corporation
FDMC8651 Rev.C
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/

FDMC8651 Datasheet
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 µA, VGS = 0 V
ID = 250 µA, referenced to 25 °C
VDS = 24 V, VGS = 0 V
VGS = ±12 V, VDS = 0 V
30 V
27.5 mV/°C
1
±100
µA
nA
On Characteristics
VGS(th)
VGS(th)
TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 µA
0.8 1.1 1.5 V
ID = 250 µA, referenced to 25 °C
-4.4 mV/°C
VGS = 4.5 V, ID = 15 A
VGS = 2.5 V, ID = 12 A
VGS = 4.5 V, ID = 15 A, TJ = 125 °C
VDD = 5 V, ID = 15 A
4.3 6.1
6.2 9.3 m
6.3 9.0
91 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
2530
865
140
0.8
3365
1150
205
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 4.5 V
Total Gate Charge
Gate to Drain “Miller” Charge
VDD = 15 V, ID = 15 A,
VGS = 4.5 V, RGEN = 6
VDD = 15 V, ID = 15 A
18 31 ns
9 18 ns
35 56 ns
6 12 ns
19.4 27.2 nC
4.8 nC
4.2 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 15 A
VGS = 0 V, IS = 1.7 A
(Note 2)
(Note 2)
0.8 1.3
V
0.7 1.2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 15 A, di/dt = 100 A/µs
35 55 ns
17 30 nC
NOTES:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 53 °C/W when mounted on a
1 in2 pad of 2 oz copper
b. 125 °C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C; N-ch: L = 1 mH, IAS = 16 A, VDD = 27 V, VGS = 10 V.
©2008 Fairchild Semiconductor Corporation
FDMC8651 Rev.C
2
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/


Features Datasheet pdf FDMC8651 N-Channel Power Trench® MOSFET July 2008 FDMC8651 N-Channel Power T rench® MOSFET 30 V, 20 A, 6.1 mΩ Fea tures „ Max rDS(on) = 6.1 mΩ at VGS = 4.5 V, ID = 15 A „ Max rDS(on) = 9.3 mΩ at VGS = 2.5 V, ID = 12 A „ Low Profile - 1 mm max in Power 33 „ 100% UIL Tested „ RoHS Compliant General D escription This device has been designe d specifically to improve the efficienc y of DC/DC converters. Using new techni ques in MOSFET construction, the variou s components of gate charge and capacit ance have been optimized to reduce swit ching losses. Low gate resistance and v ery low Miller charge enable excellent performance with both adaptive and fixe d dead time gate drive circuits. Very l ow rDS(on) has been maintained to provi de a sub logic-level device. Applicati ons „ Synchronous rectifier „ 3.3 V i nput synchronous buck switch Top Bott om S Pin 1 S S D G D D D D D D D 5 6 7 8 4 3 2 1 G S S S Power 33 MOSFET Max imum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS Parameter Drain .
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